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Semiconductor device

  • US 8,362,551 B2
  • Filed: 10/11/2011
  • Issued: 01/29/2013
  • Est. Priority Date: 11/10/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor body;

    a drift region of a first conductivity type;

    at least one trench extending into the drift region;

    at least one gate electrode;

    a field plate in at least a portion of the at least one trench, wherein the field plate comprises centers of recombination; and

    a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate;

    wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench.

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