Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a semiconductor body;
a drift region of a first conductivity type;
at least one trench extending into the drift region;
at least one gate electrode;
a field plate in at least a portion of the at least one trench, wherein the field plate comprises centers of recombination; and
a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate;
wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench.
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Abstract
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
23 Citations
22 Claims
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1. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench, wherein the field plate comprises centers of recombination; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench, wherein the first semiconducting material comprises a graded doping concentration, the graded doping concentration decreasing in a vertical direction towards a base of the at least one trench. - View Dependent Claims (15)
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16. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench, wherein the first semiconducting material comprises a linearly graded doping concentration, the linearly graded doping concentration decreasing in a vertical direction towards a base of the at least one trench.
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17. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench, wherein the doping concentration of the first semiconducting material decreases with increasing distance to a first surface of the semiconductor body.
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18. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench, wherein the field plate further comprises a metal; and wherein a further layer is arranged at least partially between the metal and the first semiconducting material.
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19. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench, the field plate comprising a first semiconducting material that is at least partially of a second conductivity type, the second conductivity type that is complementary to the first conductivity type, wherein the first semiconducting material comprises a variable doping concentration, the variable doping concentration decreasing in a vertical direction towards a base of the at least one trench; and a dielectric material at least partially surrounding the gate electrode and the field plate; wherein the field plate further comprises a second semiconducting material of the first conductivity type, the second semiconducting material being arranged at least partially between the first semiconducting material and a contact region and adjacent to the contact region and comprising a doping concentration higher than a doping concentration of the first semiconducting material. - View Dependent Claims (20, 21, 22)
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Specification