Semiconductor chip with coil element over passivation layer

• US 8,362,588 B2
• Filed: 06/13/2011
• Issued: 01/29/2013
• Est. Priority Date: 05/18/2005
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lee, Wen-Chieh, Lin, Mou-Shiung, Chou, Chien-Kang, Liu, Yi-Cheng, Chou, Chiu-Ming, Lee, Jin-Yuan
• Primary Examiner(s): Thai, Luan C
• Application Number:
  US13/159,147
• Publication Number:
  US 20110233776A1
• Time in Patent Office: 596 Days
• Field of Search: 257/528, 257/531, 257/758
• US Class Current: 257/531
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04073 Bonding areas specifically adapted for connectors of different types
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/525 with adaptable interconnections
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/10 Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01009 : Fluorine [F]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. Said second coil may be deposited by forming a first metal layer over said passivation layer, forming a pattern defining layer over said first metal layer, a first opening in said pattern defining layer exposing said first metal layer, forming a second metal layer over said first metal layer exposed by said first opening, removing said pattern defining layer, and removing said first metal layer not under said second metal layer.

Claims

1. A chip comprising:

a substrate;

a first patterned circuit layer over said substrate, wherein said first patterned circuit layer comprises a first copper layer and a first metal layer at a bottom surface and a sidewall of said first copper layer, wherein said first patterned circuit layer comprises a first coil; and

a second patterned circuit layer over said substrate, wherein said second patterned circuit layer comprises a metal trace, wherein said second patterned circuit layer comprises a second metal layer and a third metal layer on said second metal layer, wherein said third metal layer has a sidewall not covered by said second metal layer.

2. The chip of claim 1, wherein said metal trace comprises a second coil.

3. The chip of claim 2 further comprising a dielectric layer over said first patterned circuit layer, wherein said second patterned circuit layer is over said dielectric layer, wherein said second coil is vertically over said first coil.

4. The chip of claim 1 further comprising a dielectric layer over said first patterned circuit layer, wherein said second patterned circuit layer is over said dielectric layer, wherein said dielectric layer comprises a nitride.

5. The chip of claim 1 further comprising a dielectric layer over said first patterned circuit layer, wherein said second patterned circuit layer is over said dielectric layer, wherein said dielectric layer comprises an oxide.

6. The chip of claim 1, wherein said substrate comprises a silicon substrate.

7. The chip of claim 1, wherein said third metal layer comprises copper.

8. The chip of claim 1, wherein said third metal layer comprises gold.

9. The chip of claim 1, wherein said third metal layer comprises a copper layer having a thickness between 1 and 30 micrometers.

10. The chip of claim 1, wherein said second patterned circuit layer has a contact point configured for wirebonding.

11. The chip of claim 1 further comprising a polymer layer over said first patterned circuit layer, wherein said second patterned circuit layer is on said polymer layer.

12. The chip of claim 1 further comprising an insulating layer over said first and second patterned circuit layers.

13. The chip of claim 1 further comprising a polymer layer over said first and second patterned circuit layers.

14. The chip of claim 1, wherein said second metal layer comprises titanium.

15. The chip of claim 1 further comprising a metal bump on said second patterned circuit layer, wherein said metal bump comprises a tin-containing layer.

16. The chip of claim 1 further comprising a metal bump on said second patterned circuit layer, wherein said metal bump comprises a gold layer.

17. The chip of claim 1 further comprising a metal bump on said second patterned circuit layer, wherein said metal bump comprises a titanium-containing layer on said second patterned circuit layer and a fourth metal layer over said titanium-containing layer.

18. The chip of claim 1, wherein said first metal layer comprises titanium.

19. The chip of claim 1, wherein said first metal layer comprises tantalum.

21. The chip of claim 10, wherein said third metal layer comprises copper.

20. A chip comprising:

a substrate;

a first patterned circuit layer over said substrate, wherein said first patterned circuit layer comprises a first copper layer and a first metal layer at a bottom surface and a sidewall of said first copper layer, wherein said first patterned circuit layer comprises a first coil;

a first insulating layer over said substrate;

a metal pad on said first insulating layer and over said substrate, wherein said metal pad comprises a second metal layer and a third metal layer on said second metal layer, wherein said third metal layer has a sidewall not covered by said second metal layer;

a second insulating layer on a peripheral region of said metal pad and on said first insulating layer, wherein an opening in said second insulating layer is over a contact point and left and right regions of said metal pad, and said contact point and left and right regions are at a bottom of said opening, wherein said contact point is between said left and right regions; and

a metal bump on said contact point, wherein said metal bump comprises a second copper layer, wherein said metal bump has a left sidewall spaced apart from a left sidewall of said opening, and said left region is between said left sidewall of said metal bump and said left sidewall of said opening, wherein said metal bump has a right sidewall spaced apart from a right sidewall of said opening, and said right region is between said right sidewall of said metal bump and said right sidewall of said opening.

22. The chip of claim 20, wherein said third metal layer comprises gold.

23. The chip of claim 20, wherein said third metal layer comprises a copper layer having a thickness between 1 and 30 micrometers.

24. The chip of claim 20, wherein said second metal layer comprises titanium.

25. The chip of claim 20, wherein said substrate comprises a silicon substrate.

26. The chip of claim 20, wherein said first insulating layer comprises a nitride.

27. The chip of claim 20, wherein said first insulating layer comprises an oxide.

28. The chip of claim 20, wherein said first insulating layer comprises a polymer.

29. The chip of claim 20, wherein said second insulating layer comprises a polymer.

30. The chip of claim 20, wherein said metal bump has a thickness between 1 and 500 micrometers.