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Electronic devices with extended metallization layer on a passivation layer

  • US 8,362,620 B2
  • Filed: 08/26/2010
  • Issued: 01/29/2013
  • Est. Priority Date: 08/28/2009
  • Status: Active Grant
First Claim
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1. An electronic device, comprising:

  • a wafer having a non-active area;

    an insulating layer formed on the wafer;

    a passivation layer covering the insulating layer;

    a first pad positioned in the insulating layer;

    an extended metallization layer extending on said passivation layer from said first pad to a position directly above the non-active area of said wafer; and

    a through-silicon via positioned in the wafer, in correspondence with said first pad, and in contact with said extended metallization layer.

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