Power semiconductor device

• US 8,362,830 B2
• Filed: 02/01/2011
• Issued: 01/29/2013
• Est. Priority Date: 06/25/2010
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Shimizu, Kazuhiro
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US13/018,823
• Publication Number:
  US 20110316115A1
• Time in Patent Office: 728 Days
• Field of Search: 257/369, 257/370, 327564-566, 326/81, 326/83, 326/84, 326/92
• US Class Current: 327/566
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 2217/0081 Power supply means, e.g. to the switch driver

Abstract

A power semiconductor device comprises: a high-voltage side switching element and a low-voltage side switching element which are totem-pole-connected in that order from a high-voltage side between a high-voltage side potential and a low-voltage side potential; a high-voltage side drive circuit that drives the high-voltage side switching element; a low-voltage side drive circuit that drives the low-voltage side switching element; a capacitor which has a first end connected to a connection point between the high-voltage side switching element and the low-voltage side switching element and a second end connected to a power supply terminal of the high-voltage side drive circuit and supplies a drive voltage to the high-voltage side drive circuit; and a diode which has an anode connected to a power supply and a cathode connected to the second end of the capacitor and supplies a current from the power supply to the second end of the capacitor, wherein the diode includes a P-type semiconductor substrate, an N-type cathode region on a surface of the P-type semiconductor substrate, a P-type anode region in the N-type cathode region, a P-type contact region and an N-type contact region in the P-type anode region, a cathode electrode connected to the N-type cathode region, and an anode electrode connected to the P-type contact region and the N-type contact region.

Claims

1. A power semiconductor device comprising:

a high-voltage side switching element and a low-voltage side switching element which are totem-pole-connected in that order from a high-voltage side between a high-voltage side potential and a low-voltage side potential;

a high-voltage side drive circuit that drives the high-voltage side switching element;

a low-voltage side drive circuit that drives the low-voltage side switching element;

a capacitor which has a first end connected to a connection point between the high-voltage side switching element and the low-voltage side switching element and a second end connected to a power supply terminal of the high-voltage side drive circuit and supplies a drive voltage to the high-voltage side drive circuit; and

a diode which has an anode connected to a power supply and a cathode connected to the second end of the capacitor and supplies a current from the power supply to the second end of the capacitor,

wherein the diode includes a P-type semiconductor substrate, an N-type cathode region on a surface of the P-type semiconductor substrate, a P-type anode region in the N-type cathode region, a P-type contact region and an N-type contact region in the P-type anode region, a cathode electrode connected to the N-type cathode region, and an anode electrode connected to the P-type contact region and the N-type contact region.

2. The power semiconductor device according to claim 1, wherein the P-type contact region includes a first P-type region which is closer to the cathode electrode than the N-type contact region.

3. The power semiconductor device according to claim 2, wherein the P-type contact region includes a second P-type region which is provided farther from the cathode electrode than the N-type contact region.

4. The power semiconductor device according to claim 1, wherein the P-type contact region includes a plurality of first P-type regions,

the N-type contact region includes a plurality of first N-type regions, and

the plurality of first P-type regions and the plurality of first N-type regions are alternately arranged in a direction perpendicular to a direction from the anode electrode to the cathode electrode on the surface of the P-type semiconductor substrate.

5. The power semiconductor device according to claim 4, wherein the N-type contact region includes a second N-type region which is provided farther from the cathode electrode than the plurality of first P-type regions and the plurality of first N-type regions, and

the P-type contact region includes a second P-type region which is provided farther from the cathode electrode than the second N-type region.

6. The power semiconductor device according to claim 1, further comprising:

a field oxide film on the P-type semiconductor substrate between the anode electrode and the cathode electrode; and

a P-type voltage holding region which is provided in the N-type cathode region, is connected to the P-type anode region, and extends to below the field oxide film.

7. The power semiconductor device according to claim 6, wherein the P-type voltage holding region includes a plurality of stripe-shaped regions, and

the plurality of stripe-shaped regions are arranged parallel to each other along a direction perpendicular to a direction from the anode electrode to the cathode electrode on the surface of the P-type semiconductor substrate.