Memory device, manufacturing method and operating method of the same
First Claim
1. A memory device, comprising:
- a substrate;
a plurality of stacked structures disposed on the substrate, wherein each of the stacked structures comprises a string selection line, a word line, a ground selection line and an insulating line, the string selection line, the word line and the ground selection line are separated from each other by the insulating line;
a channel element disposed between the stacked structures;
a dielectric element disposed between the channel element and the stacked structure;
a source element disposed between an upper surface of a substrate and the lower surface of the channel element; and
a bit line disposed on the upper surface of the channel element.
1 Assignment
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Accused Products
Abstract
A memory device, a manufacturing method and an operating method of the same are provided. The memory device includes a substrate, stacked structures, a channel element, a dielectric element, a source element, and a bit line. The stacked structures are disposed on the substrate. Each of the stacked structures includes a string selection line, a word line, a ground selection line and an insulating line. The string selection line, the word line and the ground selection line are separated from each other by the insulating line. The channel element is disposed between the stacked structures. The dielectric element is disposed between the channel element and the stacked structure. The source element is disposed between the upper surface of the substrate and the lower surface of the channel element. The bit line is disposed on the upper surface of the channel element.
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Citations
26 Claims
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1. A memory device, comprising:
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a substrate; a plurality of stacked structures disposed on the substrate, wherein each of the stacked structures comprises a string selection line, a word line, a ground selection line and an insulating line, the string selection line, the word line and the ground selection line are separated from each other by the insulating line; a channel element disposed between the stacked structures; a dielectric element disposed between the channel element and the stacked structure; a source element disposed between an upper surface of a substrate and the lower surface of the channel element; and a bit line disposed on the upper surface of the channel element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a memory device, comprising:
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disposing a plurality of stacked structures on a substrate, wherein each of the stacked structures comprises a string selection line, a word line, a ground selection line and an insulating line, the string selection line, the word line and the ground selection line are separated from each other by the insulating line; disposing a channel element between the stacked structures; disposing a dielectric element between the channel element and the stacked structure; disposing a source element between an upper surface of the substrate and a lower surface of the channel element; and disposing a bit line on the upper surface of the channel element. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for operating a memory device, comprising:
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providing a memory device comprising; a substrate; a plurality of stacked structures disposed on the substrate, wherein each of the stacked structures comprises a string selection line, a word line, a ground selection line and an insulating line, the string selection line, the word line and the ground selection line are separated from each other by the insulating line; a channel element comprising a plurality of channel lines, the channel lines are disposed between the stacked structures and separated from each other; a dielectric element disposed between the channel lines and the stacked structures; a source element disposed between an upper surface of the substrate and a lower surface of the channel lines; and a bit line disposed on a upper surface of the channel element; and selecting at least one of the channel lines to be turned on. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification