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Memory device, manufacturing method and operating method of the same

  • US 8,363,476 B2
  • Filed: 01/19/2011
  • Issued: 01/29/2013
  • Est. Priority Date: 01/19/2011
  • Status: Expired
First Claim
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1. A memory device, comprising:

  • a substrate;

    a plurality of stacked structures disposed on the substrate, wherein each of the stacked structures comprises a string selection line, a word line, a ground selection line and an insulating line, the string selection line, the word line and the ground selection line are separated from each other by the insulating line;

    a channel element disposed between the stacked structures;

    a dielectric element disposed between the channel element and the stacked structure;

    a source element disposed between an upper surface of a substrate and the lower surface of the channel element; and

    a bit line disposed on the upper surface of the channel element.

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