Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films
First Claim
1. A metal chalcogenide precursor solution comprising an aqueous solvent having dissolved a metal cation, formate anions, and a chalcogenide composition selected from the group consisting of thiourea, thioformamide, selenourea, selenoformamide and a combination thereof, wherein the total cation concentration is from about 0.01 molar to about 3.0 molar.
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Abstract
Metal chalcogenide precursor solutions are described that comprise an aqueous solvent, dissolved metal formate salts and a chalcogenide source composition. The chalcogenide source compositions can be organic compounds lacking a carbon-carbon bond. The precursors are designed to form a desired metal chalcogenide upon thermal processing into films with very low levels of contamination. Potentially contaminating elements in the precursors form gaseous or vapor by-products that escape from the vicinity of the product metal chalcogenide films.
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17 Claims
- 1. A metal chalcogenide precursor solution comprising an aqueous solvent having dissolved a metal cation, formate anions, and a chalcogenide composition selected from the group consisting of thiourea, thioformamide, selenourea, selenoformamide and a combination thereof, wherein the total cation concentration is from about 0.01 molar to about 3.0 molar.
- 11. A method for preparing an aqueous precursor of a metal chalcogenide, the method comprising forming an aqueous solution comprising a metal cation, formate anions, and a chalcogenide composition selected from the group consisting of thiourea, thioformamide, selenourea, selenoformamide or a combination of thereof, wherein the total cation concentration is from about 0.01 molar to about 3.0 molar.
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