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Semiconductor device and peeling off method and method of manufacturing semiconductor device

  • US 8,367,440 B2
  • Filed: 04/30/2009
  • Issued: 02/05/2013
  • Est. Priority Date: 07/16/2001
  • Status: Expired due to Term
First Claim
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1. A peeling off method comprising:

  • forming a metal layer over a substrate;

    forming a metal oxide layer over the metal layer;

    forming an insulating layer over the metal oxide layer;

    forming an element over the insulating layer;

    forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and

    subsequently peeling off the element and the light emitting element from the substrate inside the metal oxide layer or at an interface of the metal oxide layer by physical means.

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