Semiconductor device and peeling off method and method of manufacturing semiconductor device
First Claim
1. A peeling off method comprising:
- forming a metal layer over a substrate;
forming a metal oxide layer over the metal layer;
forming an insulating layer over the metal oxide layer;
forming an element over the insulating layer;
forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and
subsequently peeling off the element and the light emitting element from the substrate inside the metal oxide layer or at an interface of the metal oxide layer by physical means.
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Abstract
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
346 Citations
123 Claims
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1. A peeling off method comprising:
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forming a metal layer over a substrate; forming a metal oxide layer over the metal layer; forming an insulating layer over the metal oxide layer; forming an element over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and subsequently peeling off the element and the light emitting element from the substrate inside the metal oxide layer or at an interface of the metal oxide layer by physical means. - View Dependent Claims (2, 3, 4, 5, 37)
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6. A peeling off method comprising:
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forming a layer containing a metal material over a substrate; forming a metal oxide layer over the layer containing the metal material; forming an insulating layer over the metal oxide layer; forming an element over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and subsequently peeling off the element and the light emitting element from the substrate inside the metal oxide layer or at an interface of the metal oxide layer by physical means. - View Dependent Claims (7, 8, 9, 10, 38, 39)
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11. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate, forming a metal oxide layer over said layer containing the metal material, forming an insulating layer over the metal oxide layer, forming an element over said insulating layer, forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; adhering a support to said light emitting element; peeling off said element, light emitting element and support inside the metal oxide layer or at an interface with the metal oxide layer from the substrate by physical means after adhering said support to said light emitting element, and adhering a transferring body to said insulating layer or the metal oxide layer to sandwich said element and light emitting element between said support and said transferring body. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 40, 41)
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22. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate, forming an oxide in a granular shape over said layer containing the metal material, forming an oxide layer for covering said oxide, forming an insulating layer over said oxide layer, forming an element over said insulating layer, forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; adhering a support to said light emitting element; peeling off said element, light emitting element and support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said support to said light emitting element; and adhering a transferring body to said insulating layer or said oxide layer to sandwich said element and light emitting element between said support and said transferring body. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 42, 43)
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33. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate; forming a metal oxide layer over said layer containing the metal material; forming an insulating layer over the metal oxide layer; forming an element over said insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; peeling off said element and light emitting element inside the metal oxide layer or at an interface with the metal oxide layer from the substrate by physical means; adhering a first transferring body to said insulating layer or the metal oxide layer; and adhering a second transferring body to said element to sandwich said element and light emitting element between said first transferring body and said second transferring body. - View Dependent Claims (34, 35, 36, 44)
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45. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a metal layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and separating the first layer and the substrate from the second layer, the insulating layer, the transistor and the light emitting element, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (46, 47, 48, 49, 50, 51)
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52. A method of manufacturing a semiconductor device comprising:
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forming a layer comprising a metal layer over a substrate; forming an insulating layer over the layer comprising the metal layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; and separating the layer comprising the metal layer and the substrate from the insulating layer, the transistor and the light emitting element, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (53, 54, 55, 56, 57)
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58. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a metal layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; adhering a supporting body over the light emitting element; and separating the first layer and the substrate from the second layer, the insulating layer, the transistor, the light emitting element and the supporting body, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65)
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66. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a metal layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; and separating the first layer and the substrate from the second layer, the insulating layer, the transistor, the light emitting element and the sealing film, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (67, 68, 69, 70, 71, 72)
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73. A method of manufacturing a semiconductor device comprising:
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forming a layer comprising a metal layer over a substrate; forming an insulating layer over the layer comprising the metal layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; and separating the layer comprising the metal layer and the substrate from the insulating layer, the transistor, the light emitting element and the sealing film, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (74, 75, 76, 77, 78, 79)
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80. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a conductive layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; and separating the first layer and the substrate from the second layer, the insulating layer, the transistor, the light emitting element and the sealing film, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (81, 82, 83, 84, 85, 86)
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87. A method of manufacturing a semiconductor device comprising:
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forming a layer comprising a conductive layer over a substrate; forming an insulating layer over the layer comprising the conductive layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; and separating the layer comprising the conductive layer and the substrate from the insulating layer, the transistor, the light emitting element and the sealing film, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (88, 89, 90, 91, 92, 93)
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94. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a metal layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; separating the first layer and the substrate from the second layer, the insulating layer, the transistor, the light emitting element and the sealing film; and adhering a flexible substrate so that the second layer, the insulating layer, the transistor, and the light emitting element are interposed between the sealing film and the flexible substrate, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (95, 96, 97, 98, 99, 100, 101)
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102. A method of manufacturing a semiconductor device comprising:
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forming a layer comprising a metal layer over a substrate; forming an insulating layer over the layer comprising the metal layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; separating the layer comprising the metal layer and the substrate from the insulating layer, the transistor, the light emitting element and the sealing film; and adhering a flexible substrate so that the insulating layer, the transistor, and the light emitting element are interposed between the sealing film and the flexible substrate, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (103, 104, 105, 106, 107, 108)
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109. A method of manufacturing a semiconductor device comprising:
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forming a first layer over a substrate, the first layer comprising a conductive layer; forming a second layer over the first layer; forming an insulating layer over the second layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; separating the first layer and the substrate from the second layer, the insulating layer, the transistor, the light emitting element and the sealing film; and adhering a flexible substrate so that the second layer, the insulating layer, the transistor, and the light emitting element are interposed between the sealing film and the flexible substrate, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (110, 111, 112, 113, 114, 115, 116)
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117. A method of manufacturing a semiconductor device comprising:
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forming a layer comprising a conductive layer over a substrate; forming an insulating layer over the layer comprising the conductive layer; forming a transistor over the insulating layer; forming a light emitting element over the insulating layer, the light emitting element comprising an anode and a cathode with a light emitting layer interposed between the anode and the cathode, the light emitting, layer comprising an organic light emitting material; forming a sealing film over the light emitting element, the sealing film including a laminate structure including an inorganic film and a resin film; separating the layer comprising the conductive layer and the substrate from the insulating layer, the transistor, the light emitting element and the sealing film; and adhering a flexible substrate so that the insulating layer, the transistor, and the light emitting element are interposed between the sealing film and the flexible substrate, wherein the transistor is electrically connected to the light emitting element. - View Dependent Claims (118, 119, 120, 121, 122, 123)
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Specification