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Transistor and method for manufacturing the transistor

  • US 8,367,486 B2
  • Filed: 01/20/2010
  • Issued: 02/05/2013
  • Est. Priority Date: 02/05/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a transistor comprising the steps of:

  • forming a gate electrode over a substrate;

    forming a gate insulating layer over the gate electrode;

    forming a source electrode layer and a drain electrode layer over the gate insulating layer;

    forming a first metal oxide layer including zinc and a crystal structure over the source electrode layer;

    forming a second metal oxide layer including zinc and a crystal structure over the drain electrode layer;

    forming an oxide semiconductor layer including zinc and an amorphous structure over the gate electrode and on the first metal oxide layer and the second metal oxide layer; and

    performing heat treatment to move zinc from the first metal oxide layer and the second metal oxide layer to the oxide semiconductor layer such that a first region in contact with the first metal oxide layer and a second region in contact with the second metal oxide layer are crystallized in the oxide semiconductor layer.

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