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Fin-like field effect transistor (FinFET) device and method of manufacturing same

  • US 8,367,498 B2
  • Filed: 10/18/2010
  • Issued: 02/05/2013
  • Est. Priority Date: 10/18/2010
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a semiconductor substrate;

    forming a fin structure over the semiconductor substrate, the fin structure at least partially embedded within a dielectric layer and including a first semiconductor material portion over the semiconductor substrate and a second semiconductor material portion over the first semiconductor material portion;

    forming a gate structure over a portion of the fin structure and the dielectric layer, such that the gate structure traverses the fin structure, thereby separating a source region and a drain region of the fin structure, wherein the source and drain regions of the fin structure define a channel therebetween;

    after forming the gate structure, removing the second semiconductor material portion from the source and drain regions of the fin structure, wherein removing the second semiconductor material portion from the source and drain regions of the fin structure includes forming a trench in the source and drain regions of the fin structure, the trench extending below a top surface of the dielectric layer; and

    after removing the second semiconductor material portion, forming a third material portion in the source and drain regions of the fin structure.

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