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Cyclical epitaxial deposition and etch

  • US 8,367,528 B2
  • Filed: 11/17/2009
  • Issued: 02/05/2013
  • Est. Priority Date: 11/17/2009
  • Status: Active Grant
First Claim
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1. A method for selectively forming silicon-containing material in a recess, comprising:

  • providing a substrate, the substrate including a recess and insulating surfaces;

    introducing a pulse of a silicon-containing source vapor to deposit silicon-containing material in the recess;

    introducing a continuous etchant flow of one or more vapor-phase etchants to remove portions of the deposited silicon-containing material from the recess; and

    under isobaric conditions, repeating pulses of the silicon-containing source vapor during the continuous etchant flow to selectively form the silicon-containing material in the recess.

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