Semiconductor device including common potential line

• US 8,368,079 B2
• Filed: 10/27/2009
• Issued: 02/05/2013
• Est. Priority Date: 11/15/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): MONTALVO, EVA Y
• Application Number:
  US12/606,281
• Publication Number:
  US 20100038639A1
• Time in Patent Office: 1,197 Days
• Field of Search: 257/223, 257/227, 257/291, 257/292, 257/439, 257/443, 257/655, 257/43
• US Class Current: 257/72
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Claims

1. A device comprising:

a diode comprising;

a semiconductor film including a channel formation region over a substrate, the semiconductor film comprising zinc oxide;

a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween; and

a source electrode and a drain electrode adjacent to the semiconductor film; and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the gate electrode,

wherein the gate electrode is electrically connected to one of the source electrode and the drain electrode, and

wherein the one of the source electrode and the drain electrode of the diode is electrically connected to the common potential line through a contact hole of the gate insulating film of the diode.

2. The device according to claim 1 wherein the gate electrode is located below the channel formation region.

3. The device according to claim 1 wherein the gate electrode is located over the channel formation region.

4. The device according to claim 1 wherein the semiconductor film is located over the source electrode and the drain electrode.

5. The diode according to claim 1, further comprising a pair of conductive layers between the semiconductor film and the source electrode and the drain electrode, the pair of conductive layers comprising zinc oxide.

6. An active matrix display device comprising:

a thin film transistor comprising;

a first semiconductor film comprising zinc oxide over a substrate, the first semiconductor film including a first channel formation region;

a first gate electrode adjacent to the first semiconductor film with a first gate insulating film interposed therebetween; and

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

a pixel electrode formed over the substrate, the pixel electrode being electrically connected to the thin film transistor;

a signal line formed over the substrate wherein one of the first source electrode and the first drain electrode is electrically connected to the signal line;

a diode electrically connected to the signal line, the diode comprising;

a second semiconductor film including a second channel formation region over the substrate, the second semiconductor film comprising zinc oxide;

a second gate electrode adjacent to the second semiconductor film with a second gate insulating film interposed therebetween; and

a second source electrode and a second drain electrode adjacent to the second semiconductor film, and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode, and

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

7. The active matrix display device according to claim 6 wherein the active matrix display device is a light emitting device.

8. The active matrix display device according to claim 6 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the signal line.

9. The active matrix display device according to claim 6 wherein the first semiconductor film is located over the first source electrode and the first drain electrode, and the second semiconductor film is located over the second source electrode and the second drain electrode.

10. The active matrix display device according to claim 6, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.

11. An active matrix display device comprising:

a thin film transistor comprising;

a first gate electrode over a substrate;

a first gate insulating film over the first gate electrode;

a first semiconductor film comprising zinc oxide over the first gate electrode with the first gate insulating film interposed therebetween, the first semiconductor film including a channel formation region;

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

an insulating film formed over the thin film transistor;

a pixel electrode formed over the insulating film, the pixel electrode being electrically connected to the thin film transistor;

a signal line formed over the substrate wherein one of the first source electrode and the first drain electrode is electrically connected to the signal line;

a diode electrically connected to the signal line, the diode comprising;

a second gate electrode over the substrate;

a second gate insulating film over the second gate electrode;

a second semiconductor film comprising zinc oxide over the second gate electrode with the second gate insulating film interposed therebetween;

a second source electrode and a second drain electrode adjacent to the second semiconductor film; and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode, and

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

12. The active matrix display device according to claim 11 wherein the active matrix display device is a light emitting device.

13. The active matrix display device according to claim 11 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the signal line.

14. The active matrix display device according to claim 11, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.

15. An active matrix display device comprising:

a thin film transistor comprising;

a first semiconductor film comprising zinc oxide over a substrate, the first semiconductor film including a first channel formation region;

a first gate electrode over the first semiconductor film with a first gate insulating film interposed therebetween; and

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

a pixel electrode formed over the substrate, the pixel electrode being electrically connected to the thin film transistor;

a signal line formed over the substrate wherein one of the first source electrode and the first drain electrode is electrically connected to the signal line;

a diode electrically connected to the signal line, the diode comprising;

a second semiconductor film including a second channel formation region over the substrate, the second semiconductor film comprising zinc oxide;

a second gate electrode over the second semiconductor film with a second gate insulating film interposed therebetween; and

a second source electrode and a second drain electrode adjacent to the second semiconductor film, and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode, and

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

16. The active matrix display device according to claim 15 wherein the active matrix display device is a light emitting device.

17. The active matrix display device according to claim 15 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the signal line.

18. The active matrix display device according to claim 15, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.

19. An active matrix display device comprising:

a thin film transistor comprising;

a first semiconductor film comprising zinc oxide over a substrate, the first semiconductor film including a first channel formation region;

a first gate electrode adjacent to the first semiconductor film with a first gate insulating film interposed therebetween; and

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

a pixel electrode formed over the substrate, the pixel electrode being electrically connected to the thin film transistor;

a scan line formed over the substrate wherein the first gate electrode is electrically connected to the scan line;

a diode electrically connected to the scan line, the diode comprising;

a second semiconductor film including a second channel formation region over the substrate, the second semiconductor film comprising zinc oxide;

a second gate electrode adjacent to the second semiconductor film with a second gate insulating film interposed therebetween; and

a second source electrode and a second drain electrode adjacent to the second semiconductor film, and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode, and

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

20. The active matrix display device according to claim 19 wherein the active matrix display device is a light emitting device.

21. The active matrix display device according to claim 19 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the scan line.

22. The active matrix display device according to claim 19 wherein the first semiconductor film is located over the first source electrode and the first drain electrode, and the second semiconductor film is located over the second source electrode and the second drain electrode.

23. The active matrix display device according to claim 19, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.

24. An active matrix display device comprising:

a thin film transistor comprising;

a first gate electrode over a substrate;

a first gate insulating film over the first gate electrode;

a first semiconductor film comprising zinc oxide over the first gate electrode with the first gate insulating film interposed therebetween, the first semiconductor film including a channel formation region;

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

an insulating film formed over the thin film transistor;

a pixel electrode formed over the insulating film, the pixel electrode being electrically connected to the thin film transistor;

a scan line formed over the substrate wherein the first gate electrode is electrically connected to the scan line;

a diode electrically connected to the scan line, the diode comprising;

a second gate electrode over the substrate;

a second gate insulating film over the second gate electrode;

a second semiconductor film comprising zinc oxide over the second gate electrode with the second gate insulating film interposed therebetween;

a second source electrode and a second drain electrode adjacent to the second semiconductor film; and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode, and

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

25. The active matrix display device according to claim 24 wherein the active matrix display device is a light emitting device.

26. The active matrix display device according to claim 24 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the scan line.

27. The active matrix display device according to claim 24 wherein the second gate electrode and the one of the second source electrode and the second drain electrode are electrically connected to a common potential line.

28. The active matrix display device according to claim 24, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.

29. An active matrix display device comprising:

a thin film transistor comprising;

a first semiconductor film comprising zinc oxide over a substrate, the first semiconductor film including a first channel formation region;

a first gate electrode over the first semiconductor film with a first gate insulating film interposed therebetween; and

a first source electrode and a first drain electrode adjacent to the first semiconductor film;

a pixel electrode formed over the substrate, the pixel electrode being electrically connected to the thin film transistor;

a scan line formed over the substrate wherein one of the first source electrode and the first drain electrode is electrically connected to the scan line;

a diode electrically connected to the scan line, the diode comprising;

a second semiconductor film including a second channel formation region over the substrate, the second semiconductor film comprising zinc oxide;

a second gate electrode over the second semiconductor film with a second gate insulating film interposed therebetween; and

a second source electrode and a second drain electrode adjacent to the second semiconductor film, and

a common potential line wherein the common potential line comprises a conductive layer formed from a same layer as the first gate electrode and the second gate electrode,

wherein the second gate electrode is electrically connected to one of the second source electrode and the second drain electrode,

wherein the one of the second source electrode and the second drain electrode is electrically connected to the common potential line through a contact hole of the second gate insulating film.

30. The active matrix display device according to claim 29 wherein the active matrix display device is a light emitting device.

31. The active matrix display device according to claim 29 wherein the other one of the second source electrode and the second drain electrode is electrically connected to the scan line.

32. The active matrix display device according to claim 29, further comprising:

a pair of first conductive layers between the first semiconductor film and the first source electrode and the first drain electrode, the pair of first conductive layers comprising zinc oxide; and

a pair of second conductive layers between the second semiconductor film and the second source electrode and the second drain electrode, the pair of second conductive layers comprising zinc oxide.