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Semiconductor light emitting diodes having reflective structures and methods of fabricating same

  • US 8,368,100 B2
  • Filed: 05/11/2009
  • Issued: 02/05/2013
  • Est. Priority Date: 11/14/2007
  • Status: Active Grant
First Claim
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1. A light emitting diode comprising:

  • a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;

    an anode contact that ohmically contacts the p-type layer and extends on the first face;

    a transparent insulating layer that extends on the first face outside the anode contact, with said transparent insulating layer allowing at least 90 percent of the radiation impinging on it from said light emitting diode to emerge through it; and

    a reflective cathode contact that electrically contacts the n-type layer and that extends through the transparent insulating layer and onto the transparent insulating layer that is outside the anode contact, to cover substantially all of the first face that is outside the anode contact with the reflective cathode contact.

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