Light emitting device, method of manufacturing the same, and light emitting device package
First Claim
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1. A light emitting device comprising:
- a support electrode including a first region and a second region formed around the first region with a thickness thinner than a thickness of the first region, and the support electrode formed at a lateral side thereof with a curved surface;
a reflective layer over the support electrode;
a protective insulative member over the second region of the support electrode; and
a light emitting structure located over the reflective layer, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers,wherein the protective insulative member has an inner surface and an outer surface, the distance between the inner and outer surface defining a width of the protective insulative member and the width increases from the bottom of the protective insulative member to the top of the protective insulative member.
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Abstract
A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.
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Citations
20 Claims
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1. A light emitting device comprising:
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a support electrode including a first region and a second region formed around the first region with a thickness thinner than a thickness of the first region, and the support electrode formed at a lateral side thereof with a curved surface; a reflective layer over the support electrode; a protective insulative member over the second region of the support electrode; and a light emitting structure located over the reflective layer, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers, wherein the protective insulative member has an inner surface and an outer surface, the distance between the inner and outer surface defining a width of the protective insulative member and the width increases from the bottom of the protective insulative member to the top of the protective insulative member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 20)
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14. A light emitting device comprising:
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a conductive support member; a reflective layer over a first region of the conductive support member; a protective insulative member over a second region of the conductive support member, which is positioned around the first region; a light emitting structure located over the reflective layer and the protective insulative member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers, wherein a thickness of the protective insulative member is at least two times thicker than a thickness ranging from the active layer to the protective insulative member, and wherein the protective insulative member has an inner surface and an outer surface, the distance between the inner and outer surface defining a width of the protective insulative member and the width increases from the bottom of the protective insulative member to the top of the protective insulative member. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification