Method of fabricating vertical devices using a metal support film
First Claim
1. A vertical topology light emitting device, comprising:
- a conductive support structure;
a conductive adhesion structure comprising a first metallic layer on the conductive support structure and a second metallic layer, the first metallic layer being thicker than the second metallic layer, wherein the first metallic layer comprises a first metal and the second metallic layer comprises a second metal different from the first metal;
a reflective structure on the second metallic layer, the reflective structure also serving as a first electrode, wherein the reflective structure comprises a reflective metal layer and a metal contact directly on a surface of the reflective metal layer, wherein the reflective metal layer is thicker than the metal contact;
a GaN-based semiconductor layer on the metal contact, the GaN-based semiconductor layer comprising an active layer, wherein the active layer comprises InGaN;
wherein the reflective structure reflects light from the active layer, on the surface of the reflective metal layer, wherein the surface of the reflective metal layer is a dominant reflective surface,a second electrode on a surface of the GaN-based semiconductor layer, the second electrode comprising a first layer and a second layer on the first layer; and
a metal pad on the second electrode,wherein the reflective structure reflects light from the active layer back through the surface of the GaN-based semiconductor layer.
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Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.
133 Citations
25 Claims
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1. A vertical topology light emitting device, comprising:
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a conductive support structure; a conductive adhesion structure comprising a first metallic layer on the conductive support structure and a second metallic layer, the first metallic layer being thicker than the second metallic layer, wherein the first metallic layer comprises a first metal and the second metallic layer comprises a second metal different from the first metal; a reflective structure on the second metallic layer, the reflective structure also serving as a first electrode, wherein the reflective structure comprises a reflective metal layer and a metal contact directly on a surface of the reflective metal layer, wherein the reflective metal layer is thicker than the metal contact; a GaN-based semiconductor layer on the metal contact, the GaN-based semiconductor layer comprising an active layer, wherein the active layer comprises InGaN; wherein the reflective structure reflects light from the active layer, on the surface of the reflective metal layer, wherein the surface of the reflective metal layer is a dominant reflective surface, a second electrode on a surface of the GaN-based semiconductor layer, the second electrode comprising a first layer and a second layer on the first layer; and a metal pad on the second electrode, wherein the reflective structure reflects light from the active layer back through the surface of the GaN-based semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification