Wafer level package of MEMS microphone and manufacturing method thereof

• US 8,368,153 B2
• Filed: 04/08/2010
• Issued: 02/05/2013
• Est. Priority Date: 04/08/2010
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Huang, Chien-Hsin, Lan, Bang-Chiang, Chen, Li-Che, Wang, Ming-I, Wu, Hui-Min, Su, Tzung-I
• Primary Examiner(s): Louie, Wai Sing
• Assistant Examiner(s): HARRISTON, WILLIAM A
• Application Number:
  US12/756,982
• Publication Number:
  US 20110248364A1
• Time in Patent Office: 1,034 Days
• Field of Search: 257/252, 257/254, 257/414, 257/419, 438/48, 438/50, 438/51, 438/53
• US Class Current: 257/416
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 7/0061 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H04R 2201/003 Mems transducers or their use of the electrostatic type H04R19/005
• CPC Class Codes: Y10T 29/49005 Acoustic transducer

Abstract

A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

Claims

1. A wafer level package of micro electromechanical system (MEMS) microphone, comprising:

a substrate;

a plurality of dielectric layers stacked on the substrate;

a MEMS diaphragm disposed between two adjacent dielectric layers of the dielectric layers, and a first chamber being formed between the MEMS diaphragm and the substrate;

a plurality of supporting rings disposed in some of the dielectric layers respectively and stacked with each other, and the supporting rings surrounding the MEMS diaphragm;

a protective layer disposed on the upmost supporting ring and above the MEMS diaphragm, a second chamber being formed between the MEMS diaphragm and the protective layer, and the protective layer defining a plurality of first through holes for exposing the MEMS diaphragm therefrom; and

a guard ring, wherein the guard ring is located in some of the dielectric layers under the MEMS diaphragm and surrounds the first chamber.

2. The wafer level package of MEMS microphone as claimed in claim 1, wherein material of the supporting rings comprises metal.

3. The wafer level package of MEMS microphone as claimed in claim 1, wherein material of the protective layer is selected from a group consisting of plastic, dielectric material and metal.

4. The wafer level package of MEMS microphone as claimed in claim 1, further comprising an electrode layer disposed either on the substrate or in the substrate, and the electrode layer defining a plurality of second through holes corresponding to the MEMS diaphragm and the substrate defining a hollow region corresponding to the MEMS diaphragm.

5. The wafer level package of MEMS microphone as claimed in claim 1, wherein material of the guard ring comprises metal.

6. The wafer level package of MEMS microphone as claimed in claim 1, wherein the undermost supporting ring and the MEMS diaphragm are respectively coupled to the guard ring.

7. The wafer level package of MEMS microphone as claimed in claim 1, further comprising:

a metal oxide semiconductor component disposed on the substrate, and the dielectric layers covering the metal oxide semiconductor component;

a plurality of conductive wires arranged in different layers; and

a plurality of via plugs,

wherein the conductive wires, the via plugs and the dielectric layers form an interconnect structure electrically connecting to the metal oxide semiconductor component, the dielectric layers and the conductive wires are stacked alternately, the via plugs are formed in the dielectric layers, and each via plug electrically connects to the two adjacent conductive wires corresponding thereto.

8. The wafer level package of MEMS microphone as claimed in claim 1, wherein the upmost supporting ring is completely overlaid by the protective layer.

9. The wafer level package of MEMS microphone as claimed in claim 1, wherein an inner diameter of the lower supporting ring is greater than that of the upper supporting ring, and the upmost supporting ring is located in the upmost dielectric layer.

10. A manufacturing method for wafer level package of micro electromechanical system (MEMS) microphone, comprising:

forming a plurality of dielectric layers on a substrate in sequence, forming a MEMS diaphragm between two adjacent dielectric layers of the dielectric layers and forming a plurality of supporting rings in some of the dielectric layers, wherein the supporting rings are stacked with each other, and the supporting rings surround the MEMS diaphragm;

forming a protective layer on the upmost supporting ring and above the MEMS diaphragm, and the protective layer defining a plurality of first through holes; and

forming a first chamber between the MEMS diaphragm and the substrate, and forming a second chamber between the MEMS diaphragm and the protective layer,

wherein during forming the dielectric layers, a guard ring is formed in some of the dielectric layers, and the undermost supporting ring is located on the guard ring and coupled to the guard ring.

11. The manufacturing method as claimed in claim 10, wherein the upmost supporting ring is located in the upmost dielectric layer, and an inner diameter of the lower supporting ring is greater than that of the upper supporting ring.

12. The manufacturing method as claimed in claim 10, wherein before the dielectric layers are formed in sequence, an electrode layer is formed either on the substrate or in the substrate.

13. The manufacturing method as claimed in claim 12, wherein the process of forming the first chamber comprises steps of:

removing a portion of the substrate under the MEMS diaphragm to form a hollow region so as to expose the electrode layer;

forming a plurality of second through holes in the electrode layer; and

etching portions of the dielectric layers between the MEMS diaphragm and the electrode layer through the second through holes so as to form the first chamber.

14. The manufacturing method as claimed in claim 10, wherein material of the supporting rings comprises metal.

15. The manufacturing method as claimed in claim 10, wherein material of the protective layer is selected from a group consisting of plastic, dielectric material and metal.

16. The manufacturing method as claimed in claim 10, wherein before the dielectric layers are formed, a metal oxide semiconductor component is formed on the substrate, and then the dielectric layers are formed to cover the metal oxide semiconductor component.

17. The manufacturing method as claimed in claim 16, wherein during forming the dielectric layers, a plurality of conductive wires and a plurality of via plugs are formed, the conductive wires, the via plugs and the dielectric layers form an interconnect structure electrically connecting to the metal oxide semiconductor component, the dielectric layers and the conductive wires are stacked alternately, the via plugs are formed in the dielectric layers, and each via plug electrically connects to the two adjacent conductive wires corresponding thereto.

18. The manufacturing method as claimed in claim 10, wherein the upmost supporting ring is completely overlaid by the protective layer.