Silicon-on-insulator high power amplifiers
First Claim
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1. A power amplifier comprising:
- a plurality of amplifier cells each having an input and an output, the plurality of amplifier cells being formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series, wherein each of the plurality of amplifier cells comprises;
a first transistor that is electrically insulated from the semiconductor substrate;
a first feedback resistor configured to dynamically bias the first transistor; and
a second transistor that is electrically insulated from the semiconductor substrate, the first and second transistors of each of the plurality of amplifier cells being configured as a cascode amplifier; and
wherein the first transistor of each of the plurality of amplifier cells is arranged in a common-source configuration and the second transistor of each of the plurality of amplifier cells is arranged in a common-gate configuration.
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Abstract
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
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Citations
16 Claims
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1. A power amplifier comprising:
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a plurality of amplifier cells each having an input and an output, the plurality of amplifier cells being formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series, wherein each of the plurality of amplifier cells comprises; a first transistor that is electrically insulated from the semiconductor substrate; a first feedback resistor configured to dynamically bias the first transistor; and a second transistor that is electrically insulated from the semiconductor substrate, the first and second transistors of each of the plurality of amplifier cells being configured as a cascode amplifier; and wherein the first transistor of each of the plurality of amplifier cells is arranged in a common-source configuration and the second transistor of each of the plurality of amplifier cells is arranged in a common-gate configuration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification