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Silicon-on-insulator high power amplifiers

  • US 8,368,469 B2
  • Filed: 03/10/2011
  • Issued: 02/05/2013
  • Est. Priority Date: 03/10/2010
  • Status: Active Grant
First Claim
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1. A power amplifier comprising:

  • a plurality of amplifier cells each having an input and an output, the plurality of amplifier cells being formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series, wherein each of the plurality of amplifier cells comprises;

    a first transistor that is electrically insulated from the semiconductor substrate;

    a first feedback resistor configured to dynamically bias the first transistor; and

    a second transistor that is electrically insulated from the semiconductor substrate, the first and second transistors of each of the plurality of amplifier cells being configured as a cascode amplifier; and

    wherein the first transistor of each of the plurality of amplifier cells is arranged in a common-source configuration and the second transistor of each of the plurality of amplifier cells is arranged in a common-gate configuration.

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