Method of plasmonic crystal

• US 8,372,476 B2
• Filed: 08/11/2009
• Issued: 02/12/2013
• Est. Priority Date: 05/02/2007
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Katsuhara, Tomoko, Watanabe, Yuuki, Matsumura, Hajime
• Primary Examiner(s): Nguyen, Khanh P
• Assistant Examiner(s): Squalls, Margaret
• Application Number:
  US12/538,936
• Publication Number:
  US 20090297693A1
• Time in Patent Office: 1,281 Days
• Field of Search: 427/162, 356/445, 356/301
• US Class Current: 427/162
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01N 21/554 detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
• CPC Class Codes: G01N 21/7703 using reagent-clad optical fibres or optical waveguides using measurement of total internal reflection or attenuated total reflection G01N21/552; optical fibres or waveguides per se G02B
• CPC Class Codes: G02B 5/008 Surface plasmon devices diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553
• CPC Class Codes: G02B 6/1226 involving surface plasmon interaction

Abstract

A method of designing a plasmonic crystal is provided. The method includes: determining an arrangement period of a plasmonic crystal formed on a metal surface at an interface between a dielectric and the metal in accordance with a dispersion relation of a surface plasmon polariton at the interface and a Bragg reflection condition of the surface plasmon polariton.

Claims

1. A method of manufacturing a plasmonic crystal, the method comprising:

forming a plasmonic crystal on a metal layer at an interface between a dielectric layer and a surface of the metal layer, an arrangement period of the plasmonic crystal is in accordance with a dispersion relation of a surface plasmon polariton at the interface and a Bragg reflection condition of the surface plasmon polariton shown in a following formula (1);

2. The method of manufacturing the plasmonic crystal according to claim 1,

further comprising determining the arrangement period in accordance with the dispersion relation and the Bragg reflection condition under an incident-light frequency condition and a dielectric permittivity condition.

3. The method of manufacturing the plasmonic crystal according to claim 2,

wherein the arrangement period is determined in accordance with the dispersion relation and the Bragg reflection condition in a surface plasmon resonance Kretschmann configuration including a dielectric, a metal and a prism.

6. The method according to claim 1, wherein the dispersion relation of the surface plasmon polariton is determined by:

calculating a reflection light intensity in a three-layer system of the dielectric layer, the metal layer, and a prism by using Fresnel equations and equations of multiple wave interference;

calculating a surface plasmon resonance curve in the incident-light wavelength and dielectric conditions; and

plotting and angle of a dip in the incident-light wavelength to obtain the dispersion relation of the surface plasmon polariton.

7. The method according to claim 1, wherein the wavenumber of the SPP is the same as the wavenumber of the interface between the dielectric layer and the metal layer.

8. The method according to claim 1, wherein the dielectric layer is air or purified water.

9. The method according to claim 1, wherein the arrangement period of the plasmonic crystal ranges from 180 to 340 nm.

10. The method according to claim 1, wherein an incident-light angle relative to the surface of the metal layer ranges from 41 to 50 degrees.

4. A method of enabling manufacturing a surface plasmon resonance sensor, the method comprising:

forming a plasmonic crystal on a metal layer at an interface between a dielectric layer and a surface of the metal layer, an arrangement period of the plasmonic crystal is in accordance with a dispersion relation of a surface plasmon polariton at the interface and a Bragg reflection condition of the surface plasmon polariton shown in a following formula (1);

5. A method of enhancing light emitting intensity of dye comprising:

forming a plasmonic crystal on a metal layer at an interface between a dielectric layer and a surface of the metal layer, an arrangement period of the plasmonic crystal is in accordance with a dispersion relation of a surface plasmon polariton at the interface and a Bragg reflection condition of the surface plasmon polariton shown in a following formula (1);