Method for directional deposition using a gas cluster ion beam
First Claim
1. A method for depositing material on a substrate having one or more structures that include a trench, via, contact, capacitor trench, or other recessed feature formed in said substrate and that define a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane and one or more second surfaces lying substantially perpendicular to said first plane, said one or more first surfaces including a recessed bottom surface of said one or more structures and said one or more second surfaces including opposing recessed sidewall surfaces of said one or more structures, the method comprising:
- directing a gas cluster ion beam (GCIB) formed from a source of precursor to a thin film toward said substrate with a direction of incidence, said directing said GCIB further comprises;
generating said GCIB in a reduced-pressure environment from a pressurized gas mixture having said source of precursor at a stagnation pressure in a stagnation chamber,selecting a beam size of said GCIB using a final beam aperture,selecting a beam acceleration potential,selecting a beam dose,accelerating said GCIB according to said beam acceleration potential using one or more high voltage electrodes, andirradiating said accelerated GCIB onto said substrate according to said beam dose; and
orienting said substrate relative to said direction of incidence such that said first plane is substantially perpendicular to said direction of incidence and selecting and/or modifying one or more GCIB properties selected from the group consisting of said stagnation pressure, said beam size, and said beam acceleration potential to effect a directionally deposition of said thin film on said one or more first surfaces oriented substantially perpendicular to said direction of incidence including on said recessed bottom surface, while substantially reducing or avoiding deposition of said thin film on said one or more second surfaces oriented substantially parallel to said direction of incidence including on said opposing recessed sidewall surfaces and relative to said one or more first surfaces.
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Accused Products
Abstract
A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.
39 Citations
20 Claims
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1. A method for depositing material on a substrate having one or more structures that include a trench, via, contact, capacitor trench, or other recessed feature formed in said substrate and that define a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane and one or more second surfaces lying substantially perpendicular to said first plane, said one or more first surfaces including a recessed bottom surface of said one or more structures and said one or more second surfaces including opposing recessed sidewall surfaces of said one or more structures, the method comprising:
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directing a gas cluster ion beam (GCIB) formed from a source of precursor to a thin film toward said substrate with a direction of incidence, said directing said GCIB further comprises; generating said GCIB in a reduced-pressure environment from a pressurized gas mixture having said source of precursor at a stagnation pressure in a stagnation chamber, selecting a beam size of said GCIB using a final beam aperture, selecting a beam acceleration potential, selecting a beam dose, accelerating said GCIB according to said beam acceleration potential using one or more high voltage electrodes, and irradiating said accelerated GCIB onto said substrate according to said beam dose; and orienting said substrate relative to said direction of incidence such that said first plane is substantially perpendicular to said direction of incidence and selecting and/or modifying one or more GCIB properties selected from the group consisting of said stagnation pressure, said beam size, and said beam acceleration potential to effect a directionally deposition of said thin film on said one or more first surfaces oriented substantially perpendicular to said direction of incidence including on said recessed bottom surface, while substantially reducing or avoiding deposition of said thin film on said one or more second surfaces oriented substantially parallel to said direction of incidence including on said opposing recessed sidewall surfaces and relative to said one or more first surfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification