Method for optimizing source and mask to control line width roughness and image log slope

• US 8,372,565 B2
• Filed: 08/31/2010
• Issued: 02/12/2013
• Est. Priority Date: 08/31/2010
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Tian, Kehan, Rosenbluth, Alan E., Melville, David O., Azpiroz, Jaione Tirapu, Bagheri, Saeed, Lai, Kafai
• Primary Examiner(s): YOUNG, CHRISTOPHER G
• Application Number:
  US12/872,312
• Publication Number:
  US 20120052418A1
• Time in Patent Office: 896 Days
• Field of Search: 430/5, 430/30, 716/54
• US Class Current: 430/30
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Abstract

A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.

Claims

1. A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, the method comprising:

defining a representation of the mask;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

imposing a set of metric constraints in accordance with one of the first and second relationships;

setting up an objective function of optimization in accordance with the remaining of the first and second relationships;

determining optimum constrained values of the representation of the mask in accordance with the set of metric constraints and the objective function of optimization;

outputting the optimum constrained values of the representation of the mask;

fabricating the mask according to the optimum constrained values of the representation of the mask; and

projecting the mask through the lithographic system onto the photoactive material.

2. The method of claim 1, wherein the representation of the mask is a set of polygons with transmission coefficients determined by the mask technology.

3. The method of claim 1, wherein the representation of the mask is a set of diffraction order weights representing the light which is diffracted by the mask and passes through the pupil of the lithographic system.

4. The method of claim 1, wherein the lithographic performance metric is a process window metric, an exposure latitude (EL) metric, an edge placement error (EPE) metric, or a depth of focus (DOF) metric.

5. The method of claim 1, wherein at least one of the set of the metric constraints is imposed as a penalty term in the objective function of optimization.

6. The method of claim 1, wherein the photoactive material is a photoresist.

7. The method of claim 1, furthering comprising determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric, and the steps of imposing a set of metric constraints and setting up an objective function of optimization comprising:

imposing a set of metric constraints in accordance with two of the first, second, and third relationships; and

setting up an objective function of optimization in accordance with the remaining of the first, second, and third relationships.

8. The method of claim 7, wherein the mask-writing difficulty metric is a mask manufacturability metric.

9. A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, the method comprising:

defining a representation of the mask;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric;

imposing a set of metric constraints in accordance with the first, second, and third relationships;

setting up an objective function of optimization in accordance with one of the first, second, and third relationships;

determining optimum constrained values of the representation of the mask in accordance with the set of metric constraints and the objective function of optimization;

outputting the optimum constrained values of the representation of the mask;

fabricating the mask according to the optimum constrained values of the representation of the mask; and

projecting the mask through the lithographic system onto the photoactive material.

10. A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, the method comprising:

defining a representation of the mask and a representation of a projection process;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

imposing a set of metric constraints in accordance with one of the first and second relationships;

setting up an objective function of optimization in accordance with the remaining of the first and second relationships;

determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints and the objective function of optimization;

outputting the optimum constrained values of the representations of the mask and the projection process;

fabricating the mask according to the optimum constrained values of the representation of the mask; and

projecting the mask through the lithographic system onto the photoactive material according to the optimum constrained values of the representation of the projection process.

11. The method of claim 10, wherein the representation of the mask is a set of polygons with transmission coefficients determined by the mask technology.

12. The method of claim 10, wherein the representation of the mask is a set of diffraction order weights representing the light which is diffracted by the mask and passes through the pupil of the lithographic system.

13. The method of claim 10, wherein the representation of the projection process is a set of source pixel intensities.

14. The method of claim 10, further comprising imposing an additional metric constraint from the projection process, and wherein the step of determining optimum constrained values comprises determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints, the additional metric constraint, and the objective function of optimization.

15. The method of claim 14, wherein the additional constraint is that the source pixel intensities of the projection process have fixed values.

16. The method of claim 10, wherein at least one of the set of the metric constraints is imposed as a penalty term in the objective function of optimization.

17. The method of claim 10, wherein the lithographic performance metric is a process window metric, an exposure latitude (EL) metric, an edge placement error (EPE) metric, or a depth of focus (DOF) metric.

18. The method of claim 10, furthering comprising determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric, and the steps of imposing a set of metric constraints and setting up an objective function of optimization comprising:

imposing a set of metric constraints in accordance with two of the first, second, and third relationships; and

setting up an objective function of optimization in accordance with the remaining of the first, second, and third relationships.

19. The method of claim 18, wherein the mask-writing difficulty metric is a mask manufacturability metric.

20. A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, the method comprising:

defining a representation of the mask and a representation of a projection process;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric;

imposing a set of metric constraints in accordance with the first, second, and third relationships;

setting up an objective function of optimization in accordance with one of the first, second, and third relationships;

determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints and the objective function of optimization; and

outputting the optimum constrained values of the representations of the mask and the projection process; and

projecting the mask through the lithographic system onto the photoactive material according to the optimum constrained values of the representation of the projection process.

21. A machine readable storage medium having one or more machine readable program codes stored thereon for causing the machine to perform a method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, in the medium, the one or more programs, when executed by a computer, performs the method comprising:

defining a representation of the mask;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

imposing a set of metric constraints in accordance with one of the first and second relationships;

setting up an objective function of optimization in accordance with the remaining of the first and second relationships;

determining optimum constrained values of the representation of the mask in accordance with the set of metric constraints and the objective function of optimization; and

outputting the optimum constrained values of the representation of the mask.

22. The machine readable storage medium of claim 21, wherein the representation of the mask is a set of polygons with transmission coefficients determined by the mask technology.

23. The machine readable storage medium of claim 21, wherein the representation of the mask is a set of diffraction order weights representing the light which is diffracted by the mask and passes through the pupil of the lithographic system.

24. The machine readable storage medium of claim 21, wherein the lithographic performance metric is a process window metric, an exposure latitude (EL) metric, an edge placement error (EPE) metric, or a depth of focus (DOF) metric.

25. The machine readable storage medium of claim 21, wherein at least one of the set of the metric constraints is imposed as a penalty term in the objective function of optimization.

26. The machine readable storage medium of claim 21, wherein the photoactive material is a photoresist.

27. The machine readable storage medium of claim 21, wherein the method furthering comprising determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric, and the steps of imposing a set of metric constraints and setting up an objective function of optimization comprising:

imposing a set of metric constraints in accordance with two of the first, second, and third relationships; and

setting up an objective function of optimization in accordance with the remaining of the first, second, and third relationships.

28. The machine readable storage medium of claim 27, wherein the mask-writing difficulty metric is a mask manufacturability metric.

29. The machine readable storage medium of claim 28, wherein the photoactive material is a photoresist.

30. The machine readable storage medium of claim 21, wherein the method furthering comprising determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric, and the steps of imposing a set of metric constraints and setting up an objective function of optimization comprising:

imposing a set of metric constraints in accordance with two of the first, second, and third relationships; and

setting up an objective function of optimization in accordance with the remaining of the first, second, and third relationships.

31. The machine readable storage medium of claim 30, wherein the mask-writing difficulty metric is a mask manufacturability metric.

32. A machine readable storage medium having one or more machine readable program codes stored thereon for causing the machine to perform a method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, in the medium, the one or more programs, when executed by a computer, performs the method comprising:

defining a representation of the mask;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric;

imposing a set of metric constraints in accordance with the first, second, and third relationships;

setting up an objective function of optimization in accordance with one of the first, second, and third relationships;

determining optimum constrained values of the representation of the mask in accordance with the set of metric constraints and the objective function of optimization; and

outputting the optimum constrained values of the representation of the mask.

33. A machine readable storage medium having one or more machine readable program codes stored thereon for causing the machine to perform a method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, in the medium, the one or more programs, when executed by a computer, performs the method comprising:

defining a representation of the mask and a representation of a projection process;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

imposing a set of metric constraints in accordance with one of the first and second relationships;

setting up an objective function of optimization in accordance with the remaining of the first and second relationships;

determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints and the objective function of optimization; and

outputting the optimum constrained values of the representations of the mask and the projection process.

34. The machine readable storage medium of claim 33, wherein the representation of the mask is a set of polygons with transmission coefficients determined by the mask technology.

35. The machine readable storage medium of claim 33, wherein the representation of the mask is a set of diffraction order weights representing the light which is diffracted by the mask and passes through the pupil of the lithographic system.

36. The machine readable storage medium of claim 33, wherein the representation of the projection process is a set of source pixel intensities.

37. The machine readable storage medium of claim 33, further comprising imposing an additional metric constraint from the projection process, and wherein the step of determining optimum constrained values comprises determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints, the additional metric constraint, and the objective function of optimization.

38. The machine readable storage medium of claim 37, wherein the additional constraint is that the source pixel intensities of the projection process have fixed values.

39. The machine readable storage medium of claim 33, wherein at least one of the set of the metric constraints is imposed as a penalty term in the objective function of optimization.

40. The machine readable storage medium of claim 33, wherein the lithographic performance metric is a process window metric, an exposure latitude (EL) metric, an edge placement error (EPE) metric, or a depth of focus (DOF) metric.

41. A machine readable storage medium having one or more machine readable program codes stored thereon for causing the machine to perform a method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material, in the medium, the one or more programs, when executed by a computer, performs the method comprising:

defining a representation of the mask and a representation of a projection process;

obtaining a fractional resist shot noise (FRSN) parameter;

determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter;

determining a second relationship between a second set of optical intensity values and a lithographic performance metric;

determining a third relationship between a set of polygons in the mask and a mask-writing difficulty metric;

imposing a set of metric constraints in accordance with the first, second, and third relationships;

setting up an objective function of optimization in accordance with one of the first, second, and third relationships;

determining optimum constrained values of the representations of the mask and the projection process in accordance with the set of metric constraints and the objective function of optimization; and

outputting the optimum constrained values of the representations of the mask and the projection process.