Gate dielectric first replacement gate processes and integrated circuits therefrom

• US 8,372,703 B2
• Filed: 10/20/2010
• Issued: 02/12/2013
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kirkpatrick, Brian K., Mehrad, Freidoon, Yu, Shaofeng
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US12/908,140
• Publication Number:
  US 20110031557A1
• Time in Patent Office: 846 Days
• Field of Search: None
• US Class Current: 438/199
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66553 using inside spacers, permanent or not
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes the steps of providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the PMOS regions and NMOS regions. An original gate electrode layer is formed on the gate dielectric layer. A gate masking layer is applied on the gate electrode layer. Etching is used to pattern the original gate electrode layer to simultaneously form original gate electrodes for the PMOS devices and NMOS devices. Source and drain regions are formed for the PMOS devices and NMOS devices. The original gate electrodes are removed for at least one of the PMOS devices and NMOS devices to form trenches using an etch process, such as a hydroxide-based solution, wherein at least a portion and generally substantially all of the gate dielectric layer is preserved. A metal comprising replacement gates is formed in the trenches, and fabrication of the IC is completed.

Claims

1. A method comprising:

providing a transistor region having;

a first source/drain region formed in a substrate and doped with a first dopant of a first conductivity type;

a second source/drain region formed in the substrate and doped with the first dopant;

a channel region located in the substrate between the first and second source/drain regions;

a first sidewall formed over the substrate;

a second sidewall formed over the substrate;

a trench located between the first and second sidewalls over at least a portion of the channel region;

a gate dielectric layer formed over the substrate and located within the trench, wherein the gate dielectric layer is formed of a high-k material; and

an original gate electrode formed over the gate dielectric layer and doped with the first dopant;

isolating and exposing the original gate electrode;

removing the exposed original gate electrode with a wet etch solution, wherein the wet etch solution is more reactive with the first dopant than a second dopant of a second conductivity type, and wherein the wet etch solution is generally nonreactive with the gate dielectric layer, and wherein, following the step of removing, the trench includes a first surface, a second surface, and a third surface, and wherein the first and second surfaces are substantially parallel to one another and border the first and second sidewalls, and wherein the third surface is substantially perpendicular to the first and second surfaces and defines the length of the trench, and wherein the gate dielectric layer extends across the entire length of the trench;

following the step of removing, forming a first liner layer in the trench and over the gate dielectric layer, wherein the first liner layer includes a first metal;

forming a second liner layer in the trench and over the first liner layer, wherein the second liner layer includes a second metal; and

forming a replacement gate electrode over the second liner layer so as to substantially fill the trench, wherein the gate electric electrode includes a third metal.

2. The method of claim 1, wherein the third metal is aluminum or tungsten.

3. The method of claim 2, wherein the high-k material includes hafnium and zirconium.

4. The method of claim 2, wherein the high-k material is hafnium oxide, hafnium silicon oxide, or hafnium silicon oxynitride.

5. The method of claim 4, wherein the second metal is tantalum.

6. The method of claim 5, wherein the apparatus further comprises:

a first silicide layer formed over the first source/drain region; and

a second silicide layer formed over the second source/drain region.

7. The method of claim 6, wherein the first metal is titanium.

8. The method of claim 7, wherein the first conductivity type is N-type and the second conductivity type is P-type.

9. The method of claim 8, wherein the wet etch solution further comprises aqueous NH₄OH.

10. The method of claim 9, wherein the concentration of NH₄OH in deionized water is between about 1:

20 and about 1;

200.

11. The method of claim 10, wherein the original gate electrode is formed of polysilicon.