Device structure and manufacturing method using HDP deposited using deposited source-body implant block
First Claim
1. A method for manufacturing a trenched semiconductor power device comprising;
- opening a plurality of trenches from a top surface of a semiconductor substrate and forming a thick insulation layer covering over trench sidewalls and a bottom surface of said trenches and also simultaneously covering over the top surface of the semiconductor substrate outside of the trenches; and
applying an implanting-ion block mask for etching the thick insulation layer from a top part of the trenches and the trench sidewalls and also simultaneously from an area surrounding the trenches thus leaving a thick bottom insulation layer at a bottom portion of the trenches and implanting-ion blocks above said top surface in a mesa area at a distance away from said trenches and in a middle portion between two of said trenches for blocking body implanting ions and source ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced.
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Abstract
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
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Citations
17 Claims
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1. A method for manufacturing a trenched semiconductor power device comprising;
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opening a plurality of trenches from a top surface of a semiconductor substrate and forming a thick insulation layer covering over trench sidewalls and a bottom surface of said trenches and also simultaneously covering over the top surface of the semiconductor substrate outside of the trenches; and applying an implanting-ion block mask for etching the thick insulation layer from a top part of the trenches and the trench sidewalls and also simultaneously from an area surrounding the trenches thus leaving a thick bottom insulation layer at a bottom portion of the trenches and implanting-ion blocks above said top surface in a mesa area at a distance away from said trenches and in a middle portion between two of said trenches for blocking body implanting ions and source ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification