Vertical nitride based semiconductor light emitting device having improved light extraction efficiency
First Claim
Patent Images
1. A vertical nitride semiconductor light emitting device comprising:
- a conductive substrate having first and second opposing sides;
a first conductivity-type nitride semiconductor layer;
an active layer disposed on the first conductivity-type nitride semiconductor layer;
a second conductivity-type nitride semiconductor layer disposed on the active layer;
a light scattering layer disposed on the first side of the conductive substrate, the light scattering layer being made of a different material from that of the conductive substrate, the material having a light transmissibility of 70% or more and having a rough pattern disposed on an outer surface to scatter light, wherein the light scattering layer has a refractivity of 1.5 to 2.4, and a critical angle of 36.8 to 73.7;
a first electrode disposed on the light scattering layer having a rough pattern, wherein the light scattering layer and the first electrode are disposed on the same side of the conductive substrate; and
a second electrode disposed on the second conductivity-type nitride layer, wherein the second electrode is disposed on the second side of the conductive substrate and the second electrode includes a reflective metal layer,wherein the light scattering layer extends from the conductive substrate to at least partially cover sides of the nitride light emitting device.
3 Assignments
0 Petitions
Accused Products
Abstract
The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the active layer. Further, a conductive light scattering layer made of a conductive material is formed on an underside of the substrate. The conductive light scattering layer has light transmissibility of 70% or more and has a rough pattern formed on an outer surface to scatter light.
36 Citations
5 Claims
-
1. A vertical nitride semiconductor light emitting device comprising:
-
a conductive substrate having first and second opposing sides; a first conductivity-type nitride semiconductor layer; an active layer disposed on the first conductivity-type nitride semiconductor layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; a light scattering layer disposed on the first side of the conductive substrate, the light scattering layer being made of a different material from that of the conductive substrate, the material having a light transmissibility of 70% or more and having a rough pattern disposed on an outer surface to scatter light, wherein the light scattering layer has a refractivity of 1.5 to 2.4, and a critical angle of 36.8 to 73.7; a first electrode disposed on the light scattering layer having a rough pattern, wherein the light scattering layer and the first electrode are disposed on the same side of the conductive substrate; and a second electrode disposed on the second conductivity-type nitride layer, wherein the second electrode is disposed on the second side of the conductive substrate and the second electrode includes a reflective metal layer, wherein the light scattering layer extends from the conductive substrate to at least partially cover sides of the nitride light emitting device. - View Dependent Claims (2, 3, 4, 5)
-
Specification