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Light emitting diode having distributed Bragg reflector

  • US 8,373,188 B2
  • Filed: 05/04/2011
  • Issued: 02/12/2013
  • Est. Priority Date: 07/28/2010
  • Status: Active Grant
First Claim
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1. A light-emitting diode (LED), comprising:

  • a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure comprising;

    a first conductivity-type semiconductor layer;

    a second conductivity-type semiconductor layer; and

    an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and

    a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light emitting structure,wherein the first distributed Bragg reflector comprises a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, andwherein the first distributed Bragg reflector comprises a laminate structure comprising alternately stacked SiO2 and Nb2O5 layers.

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