Semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a rectifying element;
an electrode pad electrically connected to said rectifying element; and
a resistance and a depletion transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other, the resistance and a depletion layer of the depletion transistor being included in a same layer of the semiconductor device,wherein;
said rectifying element, said resistance, said depletion transistor, and said electrode pad are serially connected,said semiconductor device being configured to generate a gate potential of said depletion transistor based on a difference in potential across said resistance, andthe depletion layer in a channel of said depletion transistor is controlled by said gate potential,the semiconductor device further comprising;
a first insulating film and a second insulating film, whereinsaid rectifying element includes an anode,said depletion transistor includes an n-channel depletion transistor,said electrode pad includes an anode electrode pad,said anode of said rectifying element, said resistance, said n-channel depletion transistor, and said anode electrode pad are serially connected in ascending order of potential,said channel of said n-channel depletion transistor overlies said anode of said rectifying element with said first insulating film interposed therebetween, and underlies said anode electrode pad with said second insulating film interposed therebetween, andsaid semiconductor device is configured such that a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film is larger than a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film.
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Abstract
A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad, and electrically connected to each other. The semiconductor device has a configuration in which the rectifying element, the resistance, the depletion transistor, and the electrode pad are serially connected. The semiconductor device is configured to generate a gate potential of the depletion transistor based on a difference in potential across the resistance and to produce a depletion layer in a channel of the depletion transistor based on the gate potential. As a result, a semiconductor device having reasonably large current at low voltage and small current at high voltage can be obtained.
42 Citations
13 Claims
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1. A semiconductor device, comprising:
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a rectifying element; an electrode pad electrically connected to said rectifying element; and a resistance and a depletion transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other, the resistance and a depletion layer of the depletion transistor being included in a same layer of the semiconductor device, wherein; said rectifying element, said resistance, said depletion transistor, and said electrode pad are serially connected, said semiconductor device being configured to generate a gate potential of said depletion transistor based on a difference in potential across said resistance, and the depletion layer in a channel of said depletion transistor is controlled by said gate potential, the semiconductor device further comprising; a first insulating film and a second insulating film, wherein said rectifying element includes an anode, said depletion transistor includes an n-channel depletion transistor, said electrode pad includes an anode electrode pad, said anode of said rectifying element, said resistance, said n-channel depletion transistor, and said anode electrode pad are serially connected in ascending order of potential, said channel of said n-channel depletion transistor overlies said anode of said rectifying element with said first insulating film interposed therebetween, and underlies said anode electrode pad with said second insulating film interposed therebetween, and said semiconductor device is configured such that a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film is larger than a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification
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Current AssigneeMitsubishi Electric Corporation
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Original AssigneeMitsubishi Electric Corporation
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InventorsKusunoki, Shigeru, Ishizawa, Shinichi
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Primary Examiner(s)Toledo, Fernando L
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Assistant Examiner(s)Shamsuzzaman, Mohammed
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Application NumberUS12/901,734Publication NumberTime in Patent Office855 DaysField of Search257/173, 257/256, 257359-360, 438/186US Class Current257/256CPC Class CodesH01L 27/0629 in combination with diodes,...
