Systems and methods for single integrated substrate cleaning and rinsing

• US 8,375,965 B2
• Filed: 11/23/2007
• Issued: 02/19/2013
• Est. Priority Date: 07/07/2004
• Status: Expired due to Fees

• Current Assignee: Nano OM LLC
• Original Assignee: Nano OM LLC
• Inventors: Puri, Suraj
• Primary Examiner(s): Kornakov, Michael
• Assistant Examiner(s): BLAN, NICOLE R
• Application Number:
  US11/944,478
• Publication Number:
  US 20080156355A1
• Time in Patent Office: 1,915 Days
• Field of Search: None
• US Class Current: 134/198
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels

Abstract

Inventive methods and systems of cleaning patterned integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: (1) providing the patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other; (2) charging a solution, which contains at least a solute selected to promote cleaning of the patterned integrated circuit substrate, to produce a charged solution, wherein at least a portion of the solute is present as clusters in the charged solution; and (3) conveying the charged solution for cleaning the patterned integrated circuit substrate.

Claims

1. A system for cleaning a patterned integrated circuit substrate, comprising:

a mixing chamber for mixing a solvent and a dissolved solute gas to produce a solution;

a charging chamber, which is different than said mixing chamber, holding said solution;

a first acoustic energy source vibrating said solution in said charging chamber to produce a charged solution including solute clusters, in which a solute is surrounded by a plurality of solvent molecules;

a cleaning assembly that is different from said charging chamber and capable of cleaning said patterned integrated circuit substrate by applying said charged solution to a surface of said patterned integrated circuit substrate.

2. The system of claim 1, further comprising a processing chamber which contains said cleaning assembly.

3. The system of claim 2, further comprising a processing connection between said charging chamber and said processing chamber for conveying said charged solution from said charging chamber to said processing chamber.

4. The system of claim 3, further comprising a diluting connection between a solvent reservoir and said processing connection for diluting said charged solution before it enters said processing chamber.

5. The system of claim 2, further comprising a second acoustic energy source disposed at or near a bottom surface of said processing chamber.

6. The system of claim 5, wherein said second acoustic energy source has outputs which are 3 Watts/cm² or higher than 3 Watts/cm².

7. The system of claim 6, wherein said second acoustic energy source has outputs which are 5 Watts/cm² or higher than 5 Watts/cm².

8. The system of claim 2, wherein said processing chamber is configured to clean one said integrated circuit substrate at a time.

9. The system of claim 1, wherein said cleaning assembly contains a first nozzle for spraying said charged solution on said patterned integrated circuit substrate.

10. The system of claim 9, wherein said cleaning assembly contains a second nozzle for spraying ozonated water on said patterned integrated circuit substrate.

11. The system of claim 10, further comprising a second acoustic energy source and wherein said first and said second nozzles are equipped with said second energy source.

12. The system of claim 10, further comprising two nozzles in addition to said first and said second nozzles, and wherein said two nozzles are configured to spray a liquid on a bottom surface of said patterned integrated circuit substrate.

13. The system of claim 12, wherein said first and said second nozzle are configured to spray a liquid on a top surface of said patterned integrated circuit substrate.

14. The system of claim 10, further comprising two nozzles in addition to said first and said second nozzle, and wherein said two nozzles are configured to spray ozone on a bottom surface of the said patterned integrated circuit substrate and said first and said second nozzles spray said charged solution on a top surface of said patterned integrated circuit substrate.

15. The system of claim 1, further comprising a filter, and said solute is dissolved ammonia gas which is filtered to a purity of about 99.99999% using said filter before said ammonia gas is mixed with said solvent.

16. The system of claim 1, further comprising a recirculation subassembly, which is connected to said charging chamber and said recirculation subassembly includes one or more chambers, each of which is capable of recirculating said charged solution and capable of progressively diluting concentration of said charged solution in said charging chamber.

17. The system of claim 1, wherein said first acoustic energy source has outputs which are 5 Watts/cm² or higher than 5 Watts/cm².

18. The system of claim 1, wherein said first acoustic energy source has outputs which are 3 Watts/cm² or higher than 3 Watts/cm².

19. The system of claim 1, further comprising a chuck capable of securing said patterned integrated circuit substrate.

20. The system of claim 19, wherein said chuck is capable of rotating said patterned substrate at a speed ranging between about 10 revolutions per minute (“

rpm”

) and about 1000 rpm.