Method of manufacturing back side illuminated imaging device
First Claim
1. A method of manufacturing a back side illuminated imaging device, the method comprising:
- forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate;
bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device;
removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate;
forming, after transferring the semiconductor detection device and the peripheral circuit device, an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate; and
annealing the amorphous semiconductor layer by using a microwave, under a condition that activates the impurities in the amorphous semiconductor layer and crystallizes the amorphous semiconductor layer, to form an impurity semiconductor layer as an inversion layer for the semiconductor device.
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Accused Products
Abstract
In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further includes removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate. The method further includes forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate, and annealing the amorphous semiconductor layer by using a microwave.
9 Citations
20 Claims
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1. A method of manufacturing a back side illuminated imaging device, the method comprising:
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forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate; bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device; removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate; forming, after transferring the semiconductor detection device and the peripheral circuit device, an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate; and annealing the amorphous semiconductor layer by using a microwave, under a condition that activates the impurities in the amorphous semiconductor layer and crystallizes the amorphous semiconductor layer, to form an impurity semiconductor layer as an inversion layer for the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a back side illuminated imaging device, the method comprising:
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forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate; forming, after forming the semiconductor detection device and the peripheral circuit device, an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device formed on the semiconductor substrate; and annealing the amorphous semiconductor layer by using a microwave, under a condition that activates the impurities in the amorphous semiconductor layer and crystallizes the amorphous semiconductor layer, to form an impurity semiconductor layer as an inversion layer for the semiconductor detection device.
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Specification