System and method for transferring substrates in large scale processing of CIGS and/or CIS devices
First Claim
1. A method for fabricating a copper indium diselenide semiconductor film comprising:
- providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrates including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening;
transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening;
introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°
C. to about 450°
C. and initiating formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;
maintaining the temperature at about the second temperature for a period of time;
removing at least the selenide species from the furnace;
introducing a hydrogen sulfide species into the furnace;
increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°
C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film.
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Abstract
The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.
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Citations
16 Claims
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1. A method for fabricating a copper indium diselenide semiconductor film comprising:
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providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrates including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening; transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening; introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°
C. to about 450°
C. and initiating formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;maintaining the temperature at about the second temperature for a period of time; removing at least the selenide species from the furnace; introducing a hydrogen sulfide species into the furnace; increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°
C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification