Semiconductor device and manufacturing method thereof
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- performing a first heat treatment on an oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;
adding oxygen into the oxide semiconductor film; and
performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.
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Abstract
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
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Citations
39 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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performing a first heat treatment on an oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the oxide semiconductor film; and performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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processing an oxide semiconductor film by etching to form an island-shaped oxide semiconductor film; performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the island-shaped oxide semiconductor film; and performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method for manufacturing a semiconductor device, comprising the steps of:
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forming over an insulating surface, an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween; processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film; performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the island-shaped oxide semiconductor film; performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.; andforming a source electrode and a drain electrode over the island-shaped oxide semiconductor film. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for manufacturing a semiconductor device, comprising the steps of:
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forming over an insulating surface, an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween; performing a first heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the oxide semiconductor film; performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film; and forming a source electrode and a drain electrode over the island-shaped oxide semiconductor film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first electrode over an insulating surface; forming an oxide semiconductor film over the first electrode; processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film so as to overlap with the first electrode; performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the island-shaped oxide semiconductor film; performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;forming a second electrode over the island-shaped oxide semiconductor film; forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and forming a gate electrode so as to overlap with an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween. - View Dependent Claims (31, 32, 33, 34)
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35. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first electrode over an insulating surface; forming an oxide semiconductor film over the first electrode; performing a first heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;adding oxygen into the oxide semiconductor film; performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°
C. and lower than or equal to 850°
C.;processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film; forming a second electrode over the island-shaped oxide semiconductor film; forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and forming a gate electrode so as to overlap with an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween. - View Dependent Claims (36, 37, 38, 39)
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Specification