Semiconductor device and manufacturing method thereof

• US 8,377,744 B2
• Filed: 12/01/2010
• Issued: 02/19/2013
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Ohara, Hiroki
• Primary Examiner(s): Coleman, William D
• Application Number:
  US12/957,437
• Publication Number:
  US 20110136301A1
• Time in Patent Office: 811 Days
• Field of Search: 438/400, 438/431, 438/509, 438/104, 438/216, 257/E21.006
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

performing a first heat treatment on an oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the oxide semiconductor film; and

performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.

2. The method for manufacturing a semiconductor device according to claim 1, wherein a top surface of the oxide semiconductor film contains a crystal.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the addition of oxygen is performed by introducing oxygen ions.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor film comprises at least indium.

5. The method for manufacturing a semiconductor device according to claim 3, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.

6. A method for manufacturing a semiconductor device, comprising the steps of:

processing an oxide semiconductor film by etching to form an island-shaped oxide semiconductor film;

performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the island-shaped oxide semiconductor film; and

performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.

7. The method for manufacturing a semiconductor device according to claim 6, wherein a top surface of the oxide semiconductor film contains a crystal.

8. The method for manufacturing a semiconductor device according to claim 6, wherein a groove is formed in a top surface of the island-shaped oxide semiconductor film.

9. The method for manufacturing a semiconductor device according to claim 6, wherein the addition of oxygen is performed by introducing oxygen ions.

10. The method for manufacturing a semiconductor device according to claim 6, wherein the island-shaped oxide semiconductor film comprises at least indium.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.

12. A method for manufacturing a semiconductor device, comprising the steps of:

forming over an insulating surface, an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film;

performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the island-shaped oxide semiconductor film;

performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.; and

forming a source electrode and a drain electrode over the island-shaped oxide semiconductor film.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising the step of:

forming an insulating film containing oxygen so as to be in contact with the island-shaped oxide semiconductor film, over the island-shaped oxide semiconductor film and the source electrode and the drain electrode.

14. The method for manufacturing a semiconductor device according to claim 12, further comprising the step of:

forming a channel protective film so as to overlap with the gate electrode over the island-shaped oxide semiconductor film.

15. The method for manufacturing a semiconductor device according to claim 12, wherein a top surface of the oxide semiconductor film contains a crystal.

16. The method for manufacturing a semiconductor device according to claim 12, wherein a groove is formed in a top surface of the island-shaped oxide semiconductor film.

17. The method for manufacturing a semiconductor device according to claim 12, wherein the addition of oxygen is performed by introducing oxygen ions.

18. The method for manufacturing a semiconductor device according to claim 12, wherein the island-shaped oxide semiconductor film comprises at least indium.

19. The method for manufacturing a semiconductor device according to claim 14, wherein the channel protective film is an insulating film containing oxygen.

20. The method for manufacturing a semiconductor device according to claim 17, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.

21. A method for manufacturing a semiconductor device, comprising the steps of:

forming over an insulating surface, an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

performing a first heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the oxide semiconductor film;

performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film; and

forming a source electrode and a drain electrode over the island-shaped oxide semiconductor film.

22. The method for manufacturing a semiconductor device according to claim 21, further comprising the step of:

forming an insulating film containing oxygen so as to be in contact with the island-shaped oxide semiconductor film, over the island-shaped oxide semiconductor film and the source electrode and the drain electrode.

23. The method for manufacturing a semiconductor device according to claim 21, further comprising the step of:

forming a channel protective film so as to overlap with the gate electrode over the island-shaped oxide semiconductor film.

24. The method for manufacturing a semiconductor device according to claim 21, wherein a top surface of the oxide semiconductor film contains a crystal.

25. The method for manufacturing a semiconductor device according to claim 21, wherein a groove is formed in a top surface of the island-shaped oxide semiconductor film.

26. The method for manufacturing a semiconductor device according to claim 21, wherein the addition of oxygen is performed by introducing oxygen ions.

27. The method for manufacturing a semiconductor device according to claim 21, wherein the island-shaped oxide semiconductor film comprises at least indium.

28. The method for manufacturing a semiconductor device according to claim 23, wherein the channel protective film is an insulating film containing oxygen.

29. The method for manufacturing a semiconductor device according to claim 26, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.

30. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over an insulating surface;

forming an oxide semiconductor film over the first electrode;

processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film so as to overlap with the first electrode;

performing a first heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the island-shaped oxide semiconductor film;

performing a second heat treatment on the island-shaped oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

forming a second electrode over the island-shaped oxide semiconductor film;

forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and

forming a gate electrode so as to overlap with an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween.

31. The method for manufacturing a semiconductor device according to claim 30, wherein a top surface of the oxide semiconductor film contains a crystal.

32. The method for manufacturing a semiconductor device according to claim 30, wherein the addition of oxygen is performed by introducing oxygen ions.

33. The method for manufacturing a semiconductor device according to claim 30, wherein the island-shaped oxide semiconductor film comprises at least indium.

34. The method for manufacturing a semiconductor device according to claim 32, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.

35. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over an insulating surface;

forming an oxide semiconductor film over the first electrode;

performing a first heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

adding oxygen into the oxide semiconductor film;

performing a second heat treatment on the oxide semiconductor film at a temperature higher than or equal to 500°

C. and lower than or equal to 850°

C.;

processing the oxide semiconductor film by etching to form an island-shaped oxide semiconductor film;

forming a second electrode over the island-shaped oxide semiconductor film;

forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and

forming a gate electrode so as to overlap with an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween.

36. The method for manufacturing a semiconductor device according to claim 35, wherein a top surface of the oxide semiconductor film contains a crystal.

37. The method for manufacturing a semiconductor device according to claim 35, wherein the addition of oxygen is performed by introducing oxygen ions.

38. The method for manufacturing a semiconductor device according to claim 35, wherein the island-shaped oxide semiconductor film comprises at least indium.

39. The method for manufacturing a semiconductor device according to claim 37, wherein the introducing the oxygen ions is performed by an ion implantation method or an ion doping method.