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Method of forming electrical connections

  • US 8,377,816 B2
  • Filed: 04/27/2010
  • Issued: 02/19/2013
  • Est. Priority Date: 07/30/2009
  • Status: Active Grant
First Claim
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1. A method of forming electrical connections to a semiconductor wafer, the method comprising:

  • providing a semiconductor wafer comprising an insulation layer, the insulation layer having a surface;

    forming an elongated column of a metal material comprising copper, protruding from the surface of the insulation layer, wherein the elongated columns of the metal material have a sidewall surface;

    forming a protection layer by an electroless plating process on the sidewall surface of the elongated columns of the metal material, wherein the protection layer comprises Sn; and

    covering a top surface of the elongated columns with a conductive material by an electroless plating process, the conductive material being discontinuous with the protection layer.

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