Oxide semiconductor and thin film transistor including the same

• US 8,378,342 B2
• Filed: 03/23/2010
• Issued: 02/19/2013
• Est. Priority Date: 03/23/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.), Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Tae-sang, Lee, Sang-yoon, Kwon, Jang-yeon, Son, Kyoung-seok, Jung, Ji-sim, Lee, Kwang-hee
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US12/659,837
• Publication Number:
  US 20100276683A1
• Time in Patent Office: 1,064 Days
• Field of Search: 257/43, 257/57, 257/E29.296, 257/E29.094, 257/E29.043
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Claims

1. An oxide semiconductor comprising hafnium (HI), indium (In), and zinc (Zn), wherein a composition ratio of indium (In) is from about 25 at. % to about 46 at. % of the total content of Hf, In, and Zn.

2. The oxide semiconductor of claim 1, wherein a composition ratio of indium (In) is from about 25 at. % to about 38 at. % with respect to the total content of In, Zn, and Hf.

3. The oxide semiconductor of claim 1, wherein a composition ratio of hafnium (Hf) is from about 2 at. % to about 16 at. % with respect to the total content of Hf, In, and Zn.

4. The oxide semiconductor of claim 3, wherein a composition ratio of hafnium (Hf) is from about 2 at. % to about 10 at. % with respect to the total content of Hf, In, and Zn.

5. The oxide semiconductor of claim 1, wherein the oxide semiconductor further comprises Group I, Group II, Group III, Group IV, or Group V elements, or lanthanides.

6. The oxide semiconductor of claim 1, wherein the oxide semiconductor is amorphous.

7. The oxide semiconductor of claim 1, wherein the oxide semiconductor is nano-crystalline.

9. The oxide TFT of claim 1, wherein a composition ratio of In is from about 25 at. % to about 38 at. % with respect to the total content of In, Zn, and HF.

8. An oxide thin film transistor (TFT) comprising:

a gate;

a channel formed in a position corresponding to the gate and comprises hafnium (Hf), indium (In), and zinc (Zn), wherein a composition ratio of In is from about 25 at. % to about 46 at. % with respect to the total content of Hf, In, and Zn;

a gate insulator between the gate and the channel; and

a source and a drain configured to contact respective ends of the channel and the gate insulator.

10. The oxide TFT of claim 8, wherein a composition ratio of hafnium (Hf) is from about 2 at. % to about 16 at. % with respect to the total content of Hf, In, and Zn.

11. The oxide TFT of claim 10, wherein a composition ratio of hafnium (Hf) is from about 2 at. % to about 10 at. % with respect to the total content of Hf, In, and Zn.

12. The oxide TFT of claim 8, wherein the oxide semiconductor further comprises Group I, Group II, Group III, Group IV, or Group V elements, or lanthanides.

13. The oxide TFT of claim 8, wherein the oxide semiconductor is amorphous.

14. The oxide TFT of claim 8, wherein the oxide semiconductor is nano-crystalline.