Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
First Claim
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1. A light-emitting device comprising:
- a pixel portion including a first thin film transistor over a substrate; and
a driver circuit including a second thin film transistor over the substrate, wherein the first thin film transistor has a different structure from the second thin film transistor,wherein the first thin film transistor comprises;
a first gate electrode layer over the substrate;
a gate insulating layer over the first gate electrode layer;
a first source electrode layer and a first drain electrode layer over the gate insulating layer;
a first oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer;
a first oxide insulating layer in contact with the first oxide semiconductor layer; and
a connection electrode layer over the gate insulating layer, wherein the connection electrode layer is electrically connected to one of the first source electrode layer and the first drain electrode layer,wherein the pixel portion comprises;
a color filter layer over the first oxide insulating layer;
a pixel electrode over the color filter layer, wherein the pixel electrode is electrically connected to the connection electrode layer;
a light-emitting layer over the pixel electrode; and
an electrode over the light-emitting layer,wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, and the first oxide insulating layer have a light-transmitting property, andwherein the connection electrode layer is in contact with a top surface of the first oxide semiconductor layer, a side surface of the first oxide semiconductor layer, and a side surface of the one of the first source electrode layer and the first drain electrode layer.
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Abstract
It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
177 Citations
20 Claims
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1. A light-emitting device comprising:
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a pixel portion including a first thin film transistor over a substrate; and a driver circuit including a second thin film transistor over the substrate, wherein the first thin film transistor has a different structure from the second thin film transistor, wherein the first thin film transistor comprises; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; a first oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer; a first oxide insulating layer in contact with the first oxide semiconductor layer; and a connection electrode layer over the gate insulating layer, wherein the connection electrode layer is electrically connected to one of the first source electrode layer and the first drain electrode layer, wherein the pixel portion comprises; a color filter layer over the first oxide insulating layer; a pixel electrode over the color filter layer, wherein the pixel electrode is electrically connected to the connection electrode layer; a light-emitting layer over the pixel electrode; and an electrode over the light-emitting layer, wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, and the first oxide insulating layer have a light-transmitting property, and wherein the connection electrode layer is in contact with a top surface of the first oxide semiconductor layer, a side surface of the first oxide semiconductor layer, and a side surface of the one of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light-emitting device comprising:
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a pixel portion including a first thin film transistor over a substrate; and a driver circuit including a second thin film transistor over the substrate, wherein the first thin film transistor has a different structure from the second thin film transistor, wherein the first thin film transistor comprises; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; a first oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer; a first oxide insulating layer in contact with the first oxide semiconductor layer; and a connection electrode layer over the gate insulating layer, wherein the connection electrode layer is electrically connected to one of the first source electrode layer and the first drain electrode layer, wherein the pixel portion comprises; a color filter layer over the first oxide insulating layer; a pixel electrode over the color filter layer, wherein the pixel electrode is electrically connected to the connection electrode layer; a light-emitting layer over the pixel electrode; and an electrode over the light-emitting layer, wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, and the first oxide insulating layer have a light-transmitting property, wherein the first oxide insulating layer is in contact with a side surface of the first oxide semiconductor layer and a side surface of the other one of the first source electrode layer and the first drain electrode layer, and wherein the connection electrode layer is in contact with a top surface of the first oxide semiconductor layer, a side surface of the first oxide semiconductor layer, and a side surface of the one of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification