Electromagnetic radiation emitting optoelectronic component and method for manufacturing an optoelectronic component

• US 8,378,366 B2
• Filed: 03/26/2008
• Issued: 02/19/2013
• Est. Priority Date: 03/30/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Arndt, Karlheinz, Petersen, Kirstin
• Primary Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US12/594,185
• Publication Number:
  US 20100230694A1
• Time in Patent Office: 1,791 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

An optoelectronic component is specified that emits a useful radiation. It comprises a housing having a housing base body with a housing cavity, and a light-emitting diode chip arranged in the housing cavity. At least one base body material of the housing base body has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. According to another embodiment of the component, the housing additionally or alternatively has a housing material transmissive for the useful radiation that has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. In addition, a method for manufacturing such a component is specified.

Claims

1. An optoelectronic component that emits a useful radiation, with a housing, wherein the housing comprises a housing base body with a base body material and a housing cavity, and comprises a housing material transmissive for the useful radiation, and with a light-emitting diode chip arranged in the housing cavity, wherein radiation-absorbing particles are admixed in a targeted manner with the housing material as well as the base body material to reduce their reflectivity;

and wherein a concentration of the radiation-absorbing particles in the base body material is higher than in the housing material transmissive for the useful radiation;

wherein at least one of the radiation-absorbing particles of the housing material and the base body material comprise carbon black;

wherein the carbon black is an industrial carbon black with compact aggregate structure (LSCB, “

low structure carbon black”

).

2. The optoelectronic component according to claim 1, wherein at least one additional light-emitting diode chip is arranged in the housing cavity.

3. The optoelectronic component according to claim 1, wherein scattering particles for scattering the useful radiation are arranged in the housing cavity.

4. The optoelectronic component according to claim 1, wherein scattering particles for scattering the useful radiation are arranged in the housing material transmissive for the useful radiation.

5. The optoelectronic component according to claim 1, wherein at least one of the radiation-absorbing particles of the housing material and the base body material are absorptive for the entire wavelength spectrum of the useful radiation or for a part of this wavelength spectrum.

6. The optoelectronic component according to claim 1, wherein at least one of the radiation-absorbing particles of the housing material and the base body material are absorptive for the entire wavelength spectrum of the radiation emitted by the light-emitting diode chip in its operation, or for a part of this wavelength spectrum.

7. The optoelectronic component according to claim 1, wherein the housing material transmissive for the useful radiation and/or the base body material comprises a potting compound or a molding compound.

8. The optoelectronic component according to claim 1, wherein the housing material transmissive for the useful radiation comprises at least one of the materials from the group consisting of epoxy resin, acrylate, silicone, thermoplastic, and hybrid material with at least one of these materials.

9. The optoelectronic component according to claim 1, wherein at least one of the radiation-absorbing particles of the housing material and the base body material have an average particle diameter of less than or equal to 100 nm.

10. The optoelectronic component according to claim 1, wherein at least one of the absorption coefficient of the radiation-absorbing particles of the base body material and the housing material varies by less than 10% in the entire spectrum of the useful radiation.

11. The optoelectronic component according to claim 1, wherein the housing cavity is least partially filled with the housing material transmissive for the useful radiation.

12. The optoelectronic component according to claim 1, wherein the light-emitting diode chip is one of encapsulated and encased by the housing material transmissive for the useful radiation.

13. The optoelectronic component according to claim 1, wherein the housing material transmissive for the useful radiation is applied at least in part to an outer surface of the housing base body.

20. The optoelectronic component according to claim 1, wherein the concentration of the radiation-absorbing particles in the base body material is at least twice as high as in the housing material transmissive for the useful radiation.

21. The optoelectronic component according to claim 1, wherein the concentration of radiation-absorbing particles in the base body material is between 0.1 wt % and 20 wt %.

22. The optoelectronic component according to claim 1, wherein the concentration of the radiation-absorbing particles in the housing material transmissive for the useful radiation is between 0.01 wt % and 0.06 wt %.

23. The optoelectronic component according to claim 1, wherein the low structure carbon black comprises aggregates composed of a plurality of primary particles, the aggregates having an average extend of less than or equal to 1 μ

m, and the primary particles having an average diameter of less than or equal to 100 nm.

14. A method for manufacturing an optoelectronic element emitting a useful radiation, comprising the steps of:

fabricating or manufacturing a housing base body with a cavity and with a base body material into which radiation-absorbing particles are admixed in a targeted manner;

providing at least one light-emitting diode chip;

providing a material transmissive for the useful radiation, into which radiation-absorbing particles are admixed in a targeted manner;

mounting the light-emitting diode chip in the housing cavity; and

arranging the material transmissive for the useful radiation in a beam path of the electromagnetic radiation that is to be emitted by the light-emitting diode chip in operation;

wherein a concentration of the radiation-absorbing particles in the base body material is higher than in the material transmissive for the useful radiation;

wherein at least one of the radiation-absorbing particles of the housing material and the base body material comprise carbon black; and

wherein the carbon black is an industrial carbon black with a compact aggregate structure (LSCB, “

low structure carbon black”

).

15. The method according to claim 14, wherein at least a part of the material transmissive for the useful radiation is arranged in the housing cavity.

16. The method according to claim 15, wherein the light-emitting diode chip is encapsulated or encased by the material transmissive for the useful radiation.

17. The method according to claim 14, wherein a component is provided that contains the light-emitting diode chip and the housing base body, and at least a part of the material transmissive for the useful radiation is applied to an exterior surface of the housing.

18. The method according to claim 17, wherein at least a part of the material transmissive for the useful radiation is provided in the form of a prefabricated material layer before application to the exterior surface.

24. The method according to claim 14, wherein the low structure carbon black comprises aggregates composed of a plurality of primary particles, the aggregates having an average extend of less than or equal to 1 μ

m, and the primary particles having an average diameter of less than or equal to 100 nm.

19. An optoelectronic component that emits a useful radiation, with a housing, wherein the housing comprises:

a housing base body comprising a base body material;

a housing cavity in the housing base body;

a light-emitting diode chip arranged in the housing cavity; and

a housing material transmissive for the useful radiation, at least a part of the housing material transmissive for the useful radiation being arranged in the housing cavity or being applied to an outer surface of the housing base body;

wherein radiation-absorbing particles are admixed in a targeted manner with the housing material and the base body material to reduce reflectivity of the housing material and the base body material;

wherein a concentration of the radiation-absorbing particles in the base body material is higher than in the housing material transmissive for the useful radiation;

wherein at least one of the radiation-absorbing particles of the housing material and the base body material carbon black; and

wherein the carbon black is an industrial carbon black with a compact aggregate structure (LSCB, “

low structure carbon black”

).

25. The optoelectronic component according to claim 19, wherein the low structure carbon black comprises aggregates composed of a plurality of primary particles, the aggregates having an average extend of less than or equal to 1 μ

m, and the primary particles having an average diameter of less than or equal to 100 nm.