Vertical light-emitting diode
First Claim
1. A vertical light-emitting diode comprising:
- a multi-layer structure comprising a plurality of group III-nitride semiconductor compound layers, wherein the multi-layer structure has a first outer surface and a second outer surface opposite to the first outer surface;
a transparent conducting layer located on the first outer surface, the transparent conducting layer substantially covering the first outer surface;
a transparent dielectric layer in contact with the transparent conducting layer on a side opposite to the side of the multi-layer structure, wherein the transparent dielectric layer includes a plurality of contact windows;
a first electrode structure located on the transparent dielectric layer and in contact with the transparent conducting layer via the contact windows; and
a second electrode structure located on the second outer surface.
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Accused Products
Abstract
The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.
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Citations
20 Claims
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1. A vertical light-emitting diode comprising:
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a multi-layer structure comprising a plurality of group III-nitride semiconductor compound layers, wherein the multi-layer structure has a first outer surface and a second outer surface opposite to the first outer surface; a transparent conducting layer located on the first outer surface, the transparent conducting layer substantially covering the first outer surface; a transparent dielectric layer in contact with the transparent conducting layer on a side opposite to the side of the multi-layer structure, wherein the transparent dielectric layer includes a plurality of contact windows; a first electrode structure located on the transparent dielectric layer and in contact with the transparent conducting layer via the contact windows; and a second electrode structure located on the second outer surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A vertical light-emitting diode comprising:
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a multi-layer structure comprising a plurality of group III-nitride semiconductor compound layers, wherein the multi-layer structure has a first outer surface and a second outer surface opposite to the first outer surface; a transparent conducting layer in contact with the first outer surface; a transparent dielectric layer in contact with the transparent conducting layer on a side opposite to the side of the multi-layer structure, the transparent dielectric layer being spaced apart from the first outer surface of the multi-layer structure and including a plurality of contact windows; a first electrode structure located on the transparent dielectric layer and in contact with the transparent conducting layer through the contact windows; and a second electrode structure located on the second outer surface. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A vertical light-emitting diode comprising:
- a multi-layer structure comprising a plurality of group III-nitride semiconductor compound layers, wherein the multi-layer structure has a first outer surface and a second outer surface opposite to the first outer surface;
a transparent conducting layer in contact with the first outer surface, the transparent conducting layer substantially covering the first outer surface;
the transparent conducting layer being made of a transparent conducting oxide material;
a transparent dielectric layer in contact with the transparent conducting layer on a side opposite to the side of the multi-layer structure, the transparent dielectric layer including a plurality of contact windows;
a first electrode structure located on the transparent dielectric layer and in contact with the transparent conducting layer through the contact windows; and
a second electrode structure located on the second outer surface. - View Dependent Claims (19, 20)
- a multi-layer structure comprising a plurality of group III-nitride semiconductor compound layers, wherein the multi-layer structure has a first outer surface and a second outer surface opposite to the first outer surface;
Specification