CMOS image sensors including backside illumination structure and method of manufacturing image sensor

• US 8,378,402 B2
• Filed: 04/03/2012
• Issued: 02/19/2013
• Est. Priority Date: 02/26/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Moon, Chang-Rok, Lee, Duck-hyung, Cho, Seong-ho
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Jiang, Fang-Xing
• Application Number:
  US13/438,340
• Publication Number:
  US 20120187463A1
• Time in Patent Office: 322 Days
• Field of Search: 257292-347, 257/E27.153, 438/60, 438/643, 438/48
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures

Abstract

An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

Claims

1. An image sensor comprising:

a photo diode unit including a first wafer, the photo diode unit comprising photo diodes including a first photo diode and transfer gate transistors including a first transfer gate transistor having a first gate, the transfer gate transistors coupled to respective ones of the photo diodes, and the photo diode unit configured to be positioned in an incident light path;

a second wafer positioned downstream from the first wafer with respect to the incident light path, the second wafer including additional transistors including a second transistor having a second gate,

wherein the first gate is positioned on a downstream surface of the first wafer with respect to the incident light path, and

wherein the second gate is positioned on a downstream surface of the second wafer with respect to the incident light path.

2. The image sensor of claim 1, wherein the first photo diode, the first gate, and the second gate are positioned to overlap in a direction of the incident light path.

3. The image sensor of claim 1, further comprising:

a filter unit upstream in the incident light path from the first wafer such that the photo diode unit is between the filter unit and the second wafer.

4. The image sensor of claim 3, wherein:

the filter unit includes an array of filters extending in a direction perpendicular to the direction of the incident light path, and

a filter of the filter unit is positioned to overlap the first photo diode, the first gate, and the second gate in a direction of the incident light path.

5. The image sensor of claim 1, further comprising:

a wiring line on the second wafer, at least part of the wiring line being downstream from the second gate with respect to the incident light path.

6. The image sensor of claim 5, wherein the wiring line, the first photo diode, the first gate, and the second gate are positioned to overlap in a direction of the incident light path.

7. The image sensor of claim 1, wherein each photo diode of the photo diode unit corresponds to one respective transistor of the additional transistors.

8. The image sensor of claim 1, wherein each one of the transfer gate transistors is electrically connected to a respective transistor of the additional transistors.

9. An image sensor comprising:

a photo diode unit in a first wafer, the photo diode unit comprising photo diodes including a first photo diode and transfer gate transistors including a first transfer gate transistor having a first gate, the transfer gate transistors coupled to respective ones of the photo diodes, and the photo diode unit configured to be positioned in an incident light path; and

a second wafer positioned downstream from the first wafer with respect to the incident light path, the second wafer including additional transistors including at least a second transistor having a second gate,

wherein the first photo diode, the first gate, and the second gate are positioned to overlap in a direction of the incident light path.

10. The image sensor of claim 9, wherein:

the first gate is positioned on a downstream surface of the first wafer with respect to the incident light path, and

the second gate is positioned on a downstream surface of the second wafer with respect to the incident light path.

11. The image sensor of claim 9, further comprising:

a filter unit upstream in the incident light path from the first wafer such that the photo diode unit is between the filter unit and the second wafer.

12. The image sensor of claim 11, wherein:

the filter unit includes an array of filters extending in a direction perpendicular to the direction of the incident light path, and

a filter of the filter unit is positioned to overlap the first photo diode, the first gate, and the second gate in a direction of the incident light path.

13. The image sensor of claim 9, further comprising:

a wiring line on the second wafer, at least part of the wiring line being downstream from the second gate with respect to the incident light path.

14. The image sensor of claim 13, wherein the wiring line is positioned to overlap the first photo diode, the first gate, and the second gate in a direction of the incident light path.

15. The image sensor of claim 9, wherein each photo diode of the photo diode unit corresponds to one respective transistor of the additional transistors.

16. The image sensor of claim 9, wherein each one of the transfer gate transistors is electrically connected to a respective transistor of the additional transistors.

17. An image sensor comprising:

a filter unit including an array of filters extending in a first direction, the filter array including a first filter;

a photo diode unit in a first wafer, the photo diode unit comprising photo diodes including a first photo diode and transfer gate transistors including a first transfer gate transistor having a first gate, the transfer gate transistors coupled to respective ones of the photo diodes, wherein the first photo diode is positioned between the first filter and the first gate in a second direction perpendicular to the first direction; and

a second wafer including additional transistors including at least a second transistor having a second gate, wherein the first gate is positioned between the second gate and the first photo diode in the second direction.

18. The image sensor of claim 17, wherein the second direction is a direction of an incident light path.

19. The image sensor of claim 17, further comprising:

a wiring line positioned such that the second gate is positioned between the first gate and at least part of the wiring line in the second direction.

20. The image sensor of claim 17, wherein each one of the transfer gate transistors is electrically connected to a respective transistor of the additional transistors.