Semiconductor device having semiconductor chip within multilayer substrate

• US 8,378,473 B2
• Filed: 11/23/2010
• Issued: 02/19/2013
• Est. Priority Date: 07/28/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Arai, Yasuyuki
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): Jung, Michael
• Application Number:
  US12/952,925
• Publication Number:
  US 20110068438A1
• Time in Patent Office: 819 Days
• Field of Search: 257/728
• US Class Current: 257/679
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01Q 1/2216 : used in interrogator/reader equipment
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them

Abstract

In inlets used for ID tags and the like, a defective connection between an integrated circuit part and an antenna is suppressed by improvement of tolerance for a bending or a pressing pressure. The integrated circuit part includes a semiconductor chip and a multilayer substrate having a concave portion. The semiconductor chip is mounted on the bottom of the concave portion. The multilayer substrate includes a connection electrode at the top surface and a connection electrode connected to the semiconductor chip on the bottom of the concave portion. The connection electrode on the bottom of the concave portion is connected to the connection electrode at the top surface by a penetration electrode inside a multilayer substrate. By such a configuration, the semiconductor chip is connected to the antenna.

Claims

1. A semiconductor device comprising:

a first layer;

a second layer over the first layer, the second layer having a hole;

a connection electrode over the first layer;

a semiconductor chip fixed to a surface of the first layer and electrically connected to the connection electrode;

a penetration electrode which penetrates the second layer and is electrically connected to the connection electrode;

a base material over the second layer; and

an antenna over the base material, the antenna electrically connected to the penetration electrode,

wherein the semiconductor chip is provided between the first layer and the base material,

wherein a first gap between a first inner side surface of the second layer and a first side surface of the semiconductor chip is smaller than a width of the semiconductor chip,

wherein a second gap between a second inner side surface of the second layer and a second side surface of the semiconductor chip is smaller than a width of the semiconductor chip, and

wherein the first inner side surface faces to the second inner side surface.

2. A semiconductor device according to claim 1, wherein each of the first layer and the second layer comprises dielectric material.

3. A semiconductor device according to claim 1, wherein each of the first layer and the second layer comprises ceramic material.

4. A semiconductor device according to claim 1, wherein each of the first layer and the second layer comprises one of rigid plastic and glass.

5. A semiconductor device according to claim 1, wherein each of the first layer and the second layer comprises nanoparticles.

6. A semiconductor device according to claim 1, wherein each of the first layer and the second layer comprises SiC.

7. A semiconductor device according to claim 1,

wherein the first layer has a thickness of 0.1 to 2 μ

m, and

wherein the second layer has a thickness of 0.1 to 2 m.

8. A semiconductor device according to claim 1, wherein the base material is attached to the second layer through a resin.

9. A semiconductor device comprising:

a body structure having a concave portion;

a connection electrode within the concave portion;

a semiconductor chip fixed to the concave portion and electrically connected to the connection electrode;

a penetration electrode which partly penetrates the body structure and is electrically connected to the connection electrode;

a base material over the body structure; and

an antenna over the base material, the antenna electrically connected to the penetration electrode,

wherein the semiconductor chip is spaced from the base material,

wherein a first qap between a first inner side surface of the body structure and a first side surface of the semiconductor chip is smaller than a width of the semiconductor chip,

wherein a second qap between a second inner side surface of the body structure and a second side surface of the semiconductor chip is smaller than a width of the semiconductor chip, and

wherein the first inner side surface faces to the second inner side surface.

10. A semiconductor device according to claim 9, wherein the body structure comprises dielectric material.

11. A semiconductor device according to claim 9, wherein the body structure comprises ceramic material.

12. A semiconductor device according to claim 9, wherein the body structure comprises one of rigid plastic and glass.

13. A semiconductor device according to claim 9, wherein the body structure comprises nanoparticles.

14. A semiconductor device according to claim 9, wherein the body structure comprises SiC.

15. A semiconductor device according to claim 9, wherein the body structure has a thickness of 10 μ

m or less.

16. A semiconductor device according to claim 9, wherein the base material is attached to the body structure through a resin.