Light-polarizing structure

• US 8,378,567 B2
• Filed: 11/05/2008
• Issued: 02/19/2013
• Est. Priority Date: 11/21/2007
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Yeh, Wen Yung, Chi, Jim Yong, Chao, Chia Hsin, Lai, Chun Feng, Hsueh, Han Tsung, Lin, Jui Ying
• Primary Examiner(s): Roy, Sikha
• Application Number:
  US12/265,123
• Publication Number:
  US 20090128004A1
• Time in Patent Office: 1,567 Days
• Field of Search: 313/498
• US Class Current: 313/498
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting device comprises a substrate, at least one light-emitting structure configured to emit light beams and positioned on the substrate, and a ring-shaped photonic crystal structure positioned in the light-emitting structure. The ring-shaped photonic crystal structure includes a plurality of pillars positioned in the light-emitting structure and a plurality of ring-shaped openings surrounding the pillars. The distance between the ring-shaped openings is preferably between 0.2λ and 10λ, and λ represents the wavelength of the light beam.

Claims

1. A light-emitting device, comprising:

a substrate;

at least one light-emitting structure positioned on the substrate, wherein the light-emitting structure includes a p-type semiconductor layer; and

a light-collimating structure positioned in the p-type semiconductor layer of the light-emitting structure, the light-collimating structure includes a plurality of pillars and a plurality of ring-shaped holes surrounding the pillars, wherein the depth of the ring-shaped hole is smaller than or equal to the thickness of the p-type semiconductor layer.

2. The light-emitting device of claim 1, wherein the light-emitting structure is a light-emitting diode or a laser diode.

3. The light-emitting device of claim 1, wherein the distance between the ring-shaped holes is between 0.2λ

and 10λ

, the light-emitting structure is configured to emit light beams, and λ

represents the wavelength of the light beams.

4. The light-emitting device of claim 1, wherein the ring-shaped holes are arranged in a periodic, quasi-periodic, or non-periodic manner.

5. The light-emitting device of claim 1, wherein the ring-shaped holes are arranged in a square, hexagonal, or polygonal manner.

6. The light-emitting device of claim 1, wherein the ring-shaped hole includes an inner ring and an outer ring, and the inner ring and the outer ring are circular, elliptic, triangular, or polygonal.

7. The light-emitting device of claim 1, wherein the pillars and the ring-shaped holes are circular, the ring-shaped hole includes an outer radius, and the ratio of the outer radius to the distance between the ring-shaped holes is between 0.1 and 0.45.

8. The light-emitting device of claim 1, wherein the light-emitting structure includes a light-emitting side, and the light-collimating structure is positioned at the light-emitting side.

9. The light-emitting device of claim 1, wherein the pillars and the ring-shaped holes are circular, the ring-shaped hole includes an outer radius and an inner radius, and the ratio of the inner radius to the outer radius is larger than 0.4 and smaller than 0.6.

10. The light-emitting device of claim 1, wherein the ring-shaped holes having a bottom inside the p-type semiconductor layer.