Semiconductor chip

• US 8,378,739 B2
• Filed: 07/15/2011
• Issued: 02/19/2013
• Est. Priority Date: 08/26/2010
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Notani, Hiromi, Kashima, Issei
• Primary Examiner(s): Hiltunen, Thomas J
• Application Number:
  US13/184,030
• Publication Number:
  US 20120049899A1
• Time in Patent Office: 585 Days
• Field of Search: 327/540
• US Class Current: 327/540
• CPC Class Codes: G05F 1/56 using semiconductor devices in series with the load as final control devices G05F1/461 takes precedence
• CPC Class Codes: G05F 1/575 characterised by the feedback circuit
• CPC Class Codes: G05F 3/242 with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Abstract

The present invention provides a semiconductor chip which is insusceptible to noise and whose consumption current is small. In a semiconductor chip, an internal power supply voltage for an internal circuit block is generated by a regulator having small current drive capability and a regulator having large current drive capability. A voltage buffer is provided between a reference voltage generating circuit and the regulator having large current drive capability. In a low-speed operation mode, the voltage buffer and the regulator having large current drive capability are made inactive. Therefore, noise in reference voltage is suppressed, and consumption current can be reduced.

Claims

1. A semiconductor chip having a first operation mode in which first current is consumed and a second operation mode in which second current larger than the first current is consumed, comprising:

a reference voltage generating circuit for generating a first reference voltage;

a first regulator having first current drive capability and generating a power supply voltage on the basis of the first reference voltage;

a voltage buffer for generating a second reference voltage of a level according to the first reference voltage;

a second regulator having second current drive capability higher than the first current drive capability and generating the power supply voltage on the basis of the second reference voltage; and

an internal circuit which is driven by the power supply voltage generated by the first and second regulators and executes the first and second operation modes,

wherein the first regulator and the voltage buffer are provided near the reference voltage generating circuit,

wherein the second regulator is provided near the internal circuit, and

wherein the voltage buffer and the second regulator are made inactive in the first operation mode.

2. The semiconductor chip according to claim 1, further comprising:

a current source which generates a constant current and outputs first and second bias voltages for passing a current of a level according to the constant current to transistors of first and second conduction types; and

a voltage source which generates constant voltage on the basis of the first and second bias voltages,

wherein the reference voltage generating circuit generates the first reference voltage on the basis of the constant voltage, and

wherein the current source and the voltage source are provided near the reference voltage generating circuit.

3. The semiconductor chip according to claim 2, wherein the reference voltage generating circuit operates on the basis of at least one of the first and second bias voltages.

4. The semiconductor chip according to claim 3, further comprising a current buffer which generates a third bias voltage of a level according to the first bias voltage,

wherein the first and second regulators operate on the basis of the first and third bias voltages, respectively, and

wherein the current buffer is provided near the reference voltage generating circuit and is made inactive in the first operation mode.

5. The semiconductor chip according to claim 4, wherein the first regulator generates a fourth bias voltage for passing a current of a level according to the constant current to the transistor of the second conduction type on the basis of the first bias voltage and operates on the basis of the first and fourth bias voltages.

6. The semiconductor chip according to claim 5, wherein the second regulator generates a fifth bias voltage for passing a current of a level according to the constant current to the transistor of the second conduction type on the basis of the third bias voltage and operates on the basis of the third and fifth bias voltages.

7. The semiconductor chip according to claim 6, wherein the current source generates the constant current of a first level in the first operation mode and generates the constant current of a second level higher than the first level in the second operation mode.