LCOS display unit and method for forming the same

• US 8,379,183 B2
• Filed: 06/08/2011
• Issued: 02/19/2013
• Est. Priority Date: 12/04/2006
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Original Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Inventors: Huang, Herb He, Pu, Xianyong, Mao, Jianhong, Chen, Yiqun, Fu, Jing, Hong, Zhongshan, Xiang, Yanghui
• Primary Examiner(s): Healy, Brian
• Assistant Examiner(s): Radkowski, Peter
• Application Number:
  US13/155,870
• Publication Number:
  US 20110237009A1
• Time in Patent Office: 622 Days
• Field of Search: 349/113, 349/187, 349/42, 349/43, 349/44, 349/110, 349/111, 349/138, 257/E31.127, 438/29, 438/30
• US Class Current: 349/187
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors

Abstract

An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.

Claims

1. A method for forming a liquid crystal display panel unit, comprising:

providing a silicon substrate;

forming a pixel switch circuit layer on the silicon substrate, the pixel switch circuit layer including a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET);

forming a light shielding layer on the pixel switch circuit layer, wherein the light shielding layer prevents light from leaking into the MOSFET and is grounded;

forming an insulation layer on the light shielding layer; and

forming a micromirror layer on the insulation layer, wherein the micromirror layer reflects light and is electrically connected with a source of the MOSFET,

wherein the micromirror layer, the insulation layer and the light shielding layer constitute a capacitor.

2. The method according to claim 1, further comprising:

forming a mirror connecting pad isolated from the light shielding layer, wherein the mirror connecting pad and the light shielding layer are formed using the same material and with the same process, wherein the mirror connecting pad is electrically connected with the source of the MOSFET.

3. The method according to claim 2, further comprising:

forming an opening in the insulation layer and filling the opening with a conductive material, wherein the conductive material electrically connects the micromirror layer to the mirror connecting pad.

4. The method according to claim 1, wherein the light shielding layer is electrically connected to a ground pad via a through hole in the pixel switch circuit layer;

and the ground pad is grounded.

5. The method according to claim 1, wherein the insulation layer has a thickness ranging from 100 Å

to 1000 Å

.

6. The method according to claim 1, wherein the insulation layer is made of silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, zirconium oxide or a combination thereof.

7. The method according to claim 1, wherein the micromirror layer is made of aluminum.

8. The method according to claim 1, wherein the light shielding layer is made of metallic titanium, titanium nitride, AlCu alloy, titanium nitride or a combination thereof.

9. The method according to claim 2, further comprising:

forming a silicon oxide layer on the light shielding layer and the mirror connecting pad prior to forming the insulation layer, wherein the silicon oxide layer fills the space between the shielding layer and the mirror connecting pad and has grooves on the surface corresponding to the space.

10. The method according to claim 9, further comprising forming an organic bottom anti-reflecting layer on the surface of the insulation layer to fill up the grooves on the surface of the insulation layer.

11. The method according to claim 10, further comprising partially removing the organic bottom anti-reflecting layer outside the grooves of the insulation layer.

12. The method according to claim 11, further comprising removing partially the silicon oxide layer by a dry etch process and planarizing the remaining silicon oxide layer until the light shielding layer is exposed.

13. The method according to claim 1, further comprising forming a liquid crystal layer on top of the micromirror layer.