Radio frequency IC device and method of manufacturing the same

• US 8,381,997 B2
• Filed: 12/01/2011
• Issued: 02/26/2013
• Est. Priority Date: 06/03/2009
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Kubota, Kenji, Kato, Noboru, Osamura, Makoto
• Primary Examiner(s): Le, Thien M
• Assistant Examiner(s): MARSHALL, CHRISTLE I
• Application Number:
  US13/308,575
• Publication Number:
  US 20120074229A1
• Time in Patent Office: 453 Days
• Field of Search: 235/492, 3405727-5728
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07756 the connection being non-galvanic, e.g. capacitive
• CPC Class Codes: H01L 2224/50 Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
• CPC Class Codes: Y10T 29/4913 Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

A radio frequency IC device that prevents variations in the value of capacitive coupling between a radio frequency IC element and a radiation electrode and has good signal transmission efficiency includes a radio frequency IC element including input/output electrodes and, a first base including intermediate electrodes that are capacitively coupled to the input/output electrodes and have capacitance values C1a and C1b, respectively, and a second base including radiation electrodes and that are capacitively coupled to the intermediate electrodes and have capacitance values C2a and C2b, respectively. A capacitance C1 obtained by combining C1a and C1b is smaller than a capacitance C2 obtained by combining C2a and C2b.

Claims

1. A radio frequency IC device comprising:

a radio frequency IC element including an input/output electrode;

a first base including an intermediate electrode; and

a second base including a radiation electrode;

wherein

the intermediate electrode is capacitively coupled to the input/output electrode via a first capacitance having a capacitance value C1;

the radiation electrode is capacitively coupled to the intermediate electrode via a second capacitance having a capacitance value C2;

the first capacitance and the second capacitance are connected in series with one another between the radio frequency IC element and the radiation electrode; and

the capacitance value C2 is greater than the capacitance value C1.

2. The radio frequency IC device according to claim 1, wherein the radio frequency IC element is attached to the first base via an insulating adhesive layer so that the input/output electrode and the intermediate electrode face each other.

3. The radio frequency IC device according to claim 1, wherein the first base is attached to the second base via an insulating adhesive layer so that the intermediate electrode and the radiation electrode face each other.

4. The radio frequency IC device according to any one of claim 1, wherein the first base is mounted on the second base, and the radio frequency IC element is sandwiched between the first base and the second base.

5. The radio frequency IC device according to claim 4, wherein the radio frequency IC element is in contact with the second base via an insulating adhesive layer.

6. The radio frequency IC device according to claim 1, wherein the second base is larger than the first base.

7. The radio frequency IC device according to claim 1, wherein the first base and the intermediate electrode have flexibility.

8. The radio frequency IC device according to claim 1, wherein the radio frequency IC element includes a radio frequency IC chip and a feeding circuit board, and the input/output electrode is disposed on or in the feeding circuit board.

9. A radio frequency IC device manufacturing method comprising:

a step of mounting a radio frequency IC element including an input/output electrode on a first base including an intermediate electrode and capacitively coupling the input/output electrode and the intermediate electrode via a first capacitance having a capacitance value C1;

a step of mounting the first base, on which the radio frequency IC element is mounted, on a second base including a radiation electrode and capacitively coupling the intermediate electrode and the radiation electrode via a second capacitance having;

a step of connecting the first capacitance and the second capacitance in series with one another between the radio frequency IC element and the radiation electrode; and

a step of setting the capacitance value C2 to be greater than the capacitance value C1.