Plasma etching method, plasma etching apparatus and storage medium

• US 8,383,001 B2
• Filed: 02/18/2010
• Issued: 02/26/2013
• Est. Priority Date: 02/20/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Mochiki, Hiromasa, Ooya, Yoshinobu, Yamazaki, Fumio, Haga, Toshio
• Primary Examiner(s): Vinh, Lan
• Assistant Examiner(s): ANGADI, MAKI A
• Application Number:
  US12/707,957
• Publication Number:
  US 20100213162A1
• Time in Patent Office: 1,104 Days
• Field of Search: 216/37, 216/67, 156/345.1, 438/710, 438/714, 438723-725
• US Class Current: 216/67
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32027 DC powered
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge

Abstract

There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

Claims

1. A plasma etching method for forming a hole in an etching target film by using a plasma etching apparatus including an evacuable processing chamber configured to accommodate a processing target object therein;

a lower electrode provided within the processing chamber and serving as a mounting table for the processing target object;

an upper electrode provided within the processing chamber and facing the lower electrode;

a processing gas supply unit configured to supply a processing gas into the processing chamber;

a plasma generation power unit configured to apply a plasma generation power to at least one of the upper electrode and the lower electrode; and

a first DC power supply configured to apply a negative DC voltage to the upper electrode, the method comprising;

turning on the plasma generation power unit while applying a first negative DC voltage from the first DC power supply; and

turning off the plasma generation power unit while applying a second negative DC voltage from the first DC power supply,

wherein an absolute value of the second negative DC voltage is greater than an absolute value of the first negative DC voltage.

2. The plasma etching method of claim 1, wherein the plasma etching apparatus further includes a bias power supply unit configured to apply a bias power to the lower electrode, and

the bias power supply unit is turned on and off in synchronization with an on/off operation of the plasma generation power unit.

3. The plasma etching method of claim 1, wherein the negative DC voltage is applied from the first DC power supply during both the period of turning on the plasma generation power unit and the period of turning off the plasma generation power unit.

4. The plasma etching method of claim 1, wherein the negative DC voltage from the first DC power supply is not applied during the period of turning on the plasma generation power unit and the negative DC voltage from the first DC power supply is applied during the period of turning off the plasma generation power unit.

5. The plasma etching method of claim 1, wherein repetition of turning on the plasma generation power unit and turning off the plasma generation power unit is carried out by applying the plasma generation power from the plasma generation power unit in a pulse pattern.

6. The plasma etching method of claim 1, wherein the etching target film of the processing target object is an insulating film.

7. A plasma etching method for forming a hole in an etching target film by using a plasma etching apparatus including an evacuable processing chamber configured to accommodate a processing target object therein;

a lower electrode provided within the processing chamber and serving as a mounting table for the processing target object;

an upper electrode provided within the processing chamber and facing the lower electrode;

a processing gas supply unit configured to supply a processing gas into the processing chamber;

a plasma generation power unit configured to apply a plasma generation power to at least one of the upper electrode and the lower electrode; and

a first DC power supply configured to apply a negative DC voltage to the upper electrode, the method comprising;

a first process and a second process,

wherein the first process comprises;

generating plasma within the processing chamber by way of continuously supplying the plasma generation power from the plasma generation power unit; and

applying a negative DC voltage to the upper electrode from the first DC power supply when necessary,

wherein the second process comprises;

turning on the plasma generation power unit while applying a first negative DC voltage from the first DC power supply; and

turning off the plasma generation power unit while applying a second negative DC voltage from the first DC power supply,

wherein an absolute value of the second negative DC voltage is greater than an absolute value of the first negative DC voltage.

8. The plasma etching method of claim 7, wherein the plasma etching apparatus further includes a bias power supply unit configured to apply a bias power to the lower electrode,

in the first process, a bias bower is continuously applied from the bias power supply unit, and

in the second process, the bias power supply unit is turned on and off in synchronization with an on/off operation of the plasma generation power unit.

9. A plasma etching method for forming a hole in an etching target film by using a plasma etching apparatus including an evacuable processing chamber configured to accommodate a processing target object therein;

a lower electrode provided within the processing chamber and serving as a mounting table for the processing target object;

an upper electrode provided within the processing chamber and facing the lower electrode;

a processing gas supply unit configured to supply a processing gas into the processing chamber;

a plasma generation power unit configured to apply a plasma generation power to at least one of the upper electrode and the lower electrode; and

a first DC power supply configured to apply a negative DC voltage to the upper electrode; and

a second DC power supply configured to apply a positive DC voltage to the lower electrode, the method comprising;

a first operation of turning on the plasma generation power unit;

a second operation of turning off the plasma generation power unit;

at least during the second operation, applying a negative DC voltage to the upper electrode from the first DC power supply; and

only during the second operation, applying a positive DC voltage to the lower electrode from the second DC power supply.

10. The plasma etching method of claim 9, wherein the plasma etching apparatus further includes a bias power supply unit configured to apply a bias power to the lower electrode, and

the bias power supply unit is turned on and off in synchronization with an on/off operation of the plasma generation power unit.

11. The plasma etching method of claim 9, wherein the negative DC voltage is applied to the upper electrode from the first DC power supply during both the period of turning on the plasma generation power unit and the period of turning off the plasma generation power unit.

12. The plasma etching method of claim 9, wherein the positive DC voltage is applied to the lower electrode only one time in a pulse pattern during the period of turning off the plasma generation power unit.

13. The plasma etching method of claim 12, wherein the positive DC voltage is applied in a pulse pattern in about 10 μ

sec to about 30 μ

sec after beginning of turning off the plasma generation power unit.

14. The plasma etching method of claim 9, wherein an absolute value of the negative DC voltage applied to the upper electrode during the period of turning off the plasma generation power unit is set to be greater than an absolute value of the negative DC voltage applied during the period of turning on the plasma generation power unit.

15. A plasma etching method for forming a hole in an etching target film by using a plasma etching apparatus including an evacuable processing chamber configured to accommodate a processing target object therein;

a lower electrode provided within the processing chamber and serving as a mounting table for the processing target object;

an upper electrode provided within the processing chamber and facing the lower electrode;

a processing gas supply unit configured to supply a processing gas into the processing chamber;

a plasma generation power unit configured to apply a plasma generation power to at least one of the upper electrode and the lower electrode; and

a first DC power supply configured to apply a negative DC voltage to the upper electrode; and

a second DC power supply configured to apply a positive DC voltage to the lower electrode, the method comprising;

a first process and a second process,

wherein the first process comprises;

generating plasma within the processing chamber by way of continuously supplying the plasma generation power from the plasma generation power unit; and

applying a negative DC voltage to the upper electrode from the first DC power supply when necessary,

wherein the second process comprises;

a first operation of turning on the plasma generation power unit;

a second operation of turning off the plasma generation power unit;

at least during the second operation, applying a negative DC voltage to the upper electrode from the first DC power supply; and

only during the second operation, applying a positive DC voltage to the lower electrode from the second DC power supply.

16. The plasma etching method of claim 15, wherein the plasma etching apparatus further includes a bias power supply unit configured to apply a bias power to the lower electrode,

in the first process, a bias power is continuously applied from the bias power supply unit, and

in the second process, the bias power supply unit is turned on and off in synchronization with an on/off operation of the plasma generation power unit.