Microsensor for mercury

• US 8,383,048 B2
• Filed: 07/21/2010
• Issued: 02/26/2013
• Est. Priority Date: 07/21/2010
• Status: Active Grant

• Current Assignee: Schlumberger Technology Corporation (SLB)
• Original Assignee: Schlumberger Technology Corporation (SLB)
• Inventors: Chen, Hua, van Hal, Ronald E. G.
• Primary Examiner(s): Menon, Krishnan S
• Assistant Examiner(s): Gerido, Dwan A
• Application Number:
  US12/840,492
• Publication Number:
  US 20120021524A1
• Time in Patent Office: 951 Days
• Field of Search: 422/401, 422/402, 422/82.02, 422/82.04, 422/88, 422/90, 422/94, 422/98, 422/82.01
• US Class Current: 422/88
• CPC Class Codes: G01N 27/06 of a liquid involving electrolysis G01N27/26
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid
• CPC Class Codes: G01N 33/0045 Hg
• CPC Class Codes: G01N 33/225 Gaseous fuels, e.g. natural gas

Abstract

Methods and devices for detecting a concentration of one or more element in hydrocarbon and/or natural gas in a oil and gas field application. The device including a microstructure having a low thermal mass suspended within a channel, the microstructure includes a supporting layer and a insulating layer; a controllable thermal device in communication with the supporting layer of the microstructure, wherein the controllable thermal device is controllably heated to one or more release temperature of the one or more element; a sensing layer arranged on the insulating layer to absorb molecules of the one or more element from hydrocarbon and/or natural gas; a detecting and measuring resistance device in communication with the sensing layer for measuring the resistance changes caused by absorption of molecules of the one or more element onto the sensing layer at a first temperature and a second temperature, and storing the data on a processor.

Claims

1. A device for detecting gaseous mercury, the device comprising:

a supporting substrate;

at least one sensing layer disposed on the supporting substrate, wherein the at least one sensing layer absorbs molecules of gaseous mercury and at least one other gaseous chemical species;

at least one controllable thermal device in communication with the at least one sensing layer, wherein the at least one controllable thermal device is configured to heat the at least one sensing layer to a release temperature of the gaseous mercury;

at least one detecting and measuring resistance device in communication with the at least one sensing layer, wherein the at least one detecting and measuring resistance device is configured to produce resistance data that includes at least a first measure of resistance within the at least one sensing layer and a second measure of resistance within the at least one sensing layer; and

a processor in communication with the at least one detecting and measuring resistance device and configured to receive the resistance data from the at least one detecting and measuring resistance device, wherein the processor is further configured to distinguish between the gaseous mercury and the at least one other gaseous chemical species based upon at least the first measure of resistance and the second measure of resistance within the at least one sensing layer.

2. The device according to claim 1,

wherein the first measure of resistance is based upon resistance below the release temperature and the second measure of resistance is based upon resistance above the release temperature.

3. The device according to claim 1, wherein the at least one other gaseous chemical species is hydrogen sulfide.

4. The device according to claim 1, further comprising:

an insulating layer disposed between the supporting substrate and the at least one sensing layer.

5. The device according to claim 1,

wherein the at least one controllable thermal device is configured to heat the at least one sensing layer to a temperature sufficient to release the gaseous mercury and the at least one other chemical species from the at least one sensing layer.

6. The device according to claim 1, wherein the at least one controllable thermal device is configured to heat the at least one sensing layer to 400°

C.

7. The device according to claim 1, wherein the at least one controllable thermal device is a conductive pathway disposed on at least a portion of the supporting substrate.

8. The device according to claim 1, wherein the at least one controllable thermal device applies heat to the at least one sensing layer when the electrical resistivity within the at least one sensing layer reaches a predetermined resistivity threshold.

9. The device according to claim 1, wherein the at least one sensing layer includes a first sensing layer and a second sensing layer.

10. The device according to claim 9, wherein the first sensing layer and the second sensing layer are formed from different materials and the first measure of resistance is based upon resistance within the first sensing layer and the second measure of resistance is based upon resistance within the second sensing layer.

11. The device according to claim 9, wherein (1) the at least one controllable thermal device is in communication with the first sensing layer and the second sensing layer, (2) the at least one controllable thermal device is configured to heat the first sensing layer to a first temperature and the second sensing layer to a second temperature, and (3) the first measure of resistance is based upon resistance within the first sensing layer at the first temperature and the second measure of resistance is based upon resistance within the second sensing layer at the second temperature.

12. The device according to claim 1, wherein the supporting substrate and the at least one sensing layer form a microstructure and the microstructure is suspended within a channel.

13. The device according to claim 12, wherein the microstructure includes a non-linear profile to provide a disturbance in a flow of a fluid through the channel.

14. The device according to claim 12, wherein the microstructure includes a variable thickness to provide a disturbance in a flow of a fluid flowing through the channel.

15. The device according to claim 1, further comprising:

an insensitive reference element disposed on the supporting substrate;

wherein the at least one detecting and measuring resistance device is in communication with the insensitive reference element and the at least one detecting and measuring resistance device is configured to produce resistance data that includes a reference measure of resistance within the insensitive reference element; and

wherein the processor is configured to distinguish between the gaseous mercury and the at least one other gaseous chemical species based upon at least the first measure of resistance, the second measure of resistance, and the reference measure of resistance.

16. The device according to claim 15, wherein the insensitive reference element includes:

a reference layer disposed on the supporting substrate; and

a gas impermeable layer disposed on at least a portion of the reference layer to prevent absorption of at least one of the gaseous mercury or the at least one other gaseous chemical species.

17. The device according to claim 1, wherein the at least one sensing layer is a porous metal.

18. The device according to claim 17, wherein the at least one sensing layer is black gold.