Colloidal-processed silicon particle device
First Claim
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1. A process for forming a colloidal-processed silicon (Si) particle device, the process comprising:
- providing a substrate;
forming a first electrode overlying the substrate;
forming a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing; and
,depositing a colloidal Si particle suspension overlying the first electrode, the second electrode, and the spacing between the electrodes, the colloidal Si particle suspension including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles suspended in a non-polar evaporative solvent with alkene.
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Abstract
Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.
17 Citations
5 Claims
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1. A process for forming a colloidal-processed silicon (Si) particle device, the process comprising:
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providing a substrate; forming a first electrode overlying the substrate; forming a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing; and
,depositing a colloidal Si particle suspension overlying the first electrode, the second electrode, and the spacing between the electrodes, the colloidal Si particle suspension including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles suspended in a non-polar evaporative solvent with alkene. - View Dependent Claims (2, 3, 4, 5)
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Current AssigneeSharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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Original AssigneeSharp Laboratories of America Incorporated (Hon Hai Precision Industry Co., Ltd.)
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InventorsHuang, Jiandong, Tang, Liang, Zhan, Changqing, Tu, Chang-Ching
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Primary Examiner(s)Mai, Anh
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Application NumberUS12/835,974Publication NumberTime in Patent Office958 DaysField of Search438/26, 438/29, 313498-512, 257/13, 257/103US Class Current438/29CPC Class CodesH01L 21/02532 Silicon, silicon germanium,...H01L 21/02601 Nanoparticles fullerenes H1...H01L 21/02628 using solutionsH01L 33/18 within the light emitting r...
