Semiconductor device and manufacturing method thereof

• US 8,383,465 B2
• Filed: 07/15/2011
• Issued: 02/26/2013
• Est. Priority Date: 05/13/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Je-Hun, Kim, Do-Hyun, Ihn, Tae-Hyung
• Primary Examiner(s): CAMPBELL, SHAUN M
• Application Number:
  US13/183,711
• Publication Number:
  US 20110266538A1
• Time in Patent Office: 592 Days
• Field of Search: 438/104, 438/149, 438/795, 257/E21.411, 257/E21.413
• US Class Current: 438/149
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

Claims

1. A method of manufacturing a semiconductor device, the method comprising;

forming a nitride semiconductor layer;

forming a first conductive layer on the nitride semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of nitride formation lower than those of the second element or any element in the nitride semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

nitrogenizing the first element near an interface region between the first conductive layer and the nitride semiconductor layer.

2. The method of claim 1, wherein nitrogenizing the first element comprises heat treating the first element.

3. The method of claim 1, wherein nitrogenizing the first element comprises irradiating the first element with a laser.

4. The method of claim 1, wherein the second conductive layer has higher crystallinity than the first conductive layer.

5. The method of claim 1, wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.

6. The method of claim 1, wherein the nitride semiconductor layer comprises at least one of zinc nitride, indium nitride, gallium nitride, and yttrium nitride.

7. The method of claim 1, wherein the nitride semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, and I.