Thin film transistor and method of manufacturing the same
First Claim
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1. A method of manufacturing an oxide TFT, comprising:
- forming a gate on a substrate;
forming a gate insulating layer on the substrate and the gate;
depositing a metal material on the gate insulating layer;
coating a channel material on the metal material;
annealing the coated metal material such that a channel is formed;
coating a conductive material on the channel; and
etching the coated conductive material until a surface of the channel is exposed.
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Abstract
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
3 Citations
12 Claims
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1. A method of manufacturing an oxide TFT, comprising:
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forming a gate on a substrate; forming a gate insulating layer on the substrate and the gate; depositing a metal material on the gate insulating layer; coating a channel material on the metal material; annealing the coated metal material such that a channel is formed; coating a conductive material on the channel; and etching the coated conductive material until a surface of the channel is exposed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing an oxide TFT, comprising:
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forming a gate on a substrate; forming a gate insulating layer on the substrate and the gate; depositing a metal material on the gate insulating layer; coating a channel material on the metal material; forming a channel from the channel material, wherein the metal material diffuses to an upper surface of the channel; coating a conductive material on the channel; and etching the coated conductive material until the upper surface of the channel is exposed. - View Dependent Claims (11, 12)
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Specification