High-density nonvolatile memory and methods of making the same
First Claim
1. A method to form a nonvolatile memory cell, the method comprising:
- i) forming a first conductor at a first height above a substrate;
ii) forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type;
iii) forming a first antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and
iv) forming a second conductor above the first antifuse.
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Abstract
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; forming a first dielectric antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and forming a second conductor above the first dielectric antifuse.
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Citations
11 Claims
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1. A method to form a nonvolatile memory cell, the method comprising:
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i) forming a first conductor at a first height above a substrate; ii) forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; iii) forming a first antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and iv) forming a second conductor above the first antifuse. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification