Method for providing electrical connections to spaced conductive lines

• US 8,383,504 B2
• Filed: 09/19/2011
• Issued: 02/26/2013
• Est. Priority Date: 05/20/2009
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej, Sills, Scott
• Primary Examiner(s): Coleman, William D
• Application Number:
  US13/235,939
• Publication Number:
  US 20120009784A1
• Time in Patent Office: 526 Days
• Field of Search: 438/610, 257/E21.035, 257/E51.036
• US Class Current: 438/610
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/28035 the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities H01L21/28105 takes precedence
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 21/76895 Local interconnects; Local pads, as exemplified by patent document EP0896365
• CPC Class Codes: H01L 21/823871 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 2224/06138 being disposed in a single wiring level, i.e. planar layout
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10B 12/482 Bit lines
• CPC Class Codes: H10B 12/485 Bit line contacts
• CPC Class Codes: H10B 12/488 Word lines

Abstract

An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.

Claims

1. A method of fabricating an integrated circuit structure on a support structure, the method comprising:

forming a self-assembled block copolymer material comprising a first polymer and spaced material lines of a second polymer;

removing said first polymer from said self-assembled block copolymer material;

cutting said spaced material lines at an angle relative to a linearly extending direction to form respective angled end faces at each of the spaced material lines, said respective angled end faces being spaced in the linearly extending direction;

forming an extension of each of said spaced material lines at each respective angled end face.

2. The method of claim 1, further comprising etching a conductive material provided below said spaced material lines and respective extensions using said spaced material lines and respective extensions as an etch mask to form conductive lines having respective electrical contact landing pad areas.

3. The method of claim 1, further comprising incorporating a metal in said self-assembled block copolymer material.

4. The method of claim 1, wherein said removing comprises exposing said first polymer to an ultraviolet light and immersing said first polymer in a developer solution.

5. The method of claim 1, further comprising metalizing said second polymer after said removing said first polymer.

6. The method of claim 1, wherein the first polymer comprises polymethylmethacrylate and the second polymer comprises polystryene.

7. The method of claim 1, wherein said forming a self-assembled block copolymer includes aligning said spaced material lines in a parallel spaced formation.

8. The method of claim 1, wherein said respective angled end faces each have a length that is greater than a width of the respective spaced material lines.

9. The method of claim 3, wherein said extensions are grown via selective deposition at each respective angled end face using said metal as a seed material.

10. The method of claim 9, wherein said selective deposition is a chemical vapor deposition process, an atomic layer deposition process, or an electroless plating process.

11. The method of claim 5, wherein said metalizing includes soaking said second polymer in an acidic metal salt solution.

12. A method of fabricating an integrated circuit structure on a support structure, the method comprising:

forming a plurality of linearly extending lines of a block copolymer material;

etching a conductive material provided below said linearly extending lines using said linearly extending lines as an etch mask to form conductive lines;

cutting said conductive lines at an angle relative to a linearly extending direction to form respective angled end faces at each of the conductive lines, said respective angled end faces being spaced in the linearly extending direction; and

forming an extension of each of said conductive lines at each respective angled end face.

13. The method of claim 12, further comprising dissolving a first polymer of the block copolymer material prior to said etching.

14. The method of claim 12, further comprising covering said conductive material lines with an encapsulation insulating material prior to cutting said parallel material lines.

15. The method of claim 12, wherein said angled end faces are cut using a mask and etching process to form the angled end faces of the material lines simultaneously.

16. The method of claim 12, wherein said extensions are grown via selective deposition of a pad material at said respective angled end faces.

17. The method of claim 12, wherein said extensions are electrically conductive contact landing pads.

18. The method of claim 12, wherein said respective angled end faces each have a length that is greater than a width of the respective spaced material lines.

19. The method of claim 12, wherein

said cutting comprises covering said conductive lines in a photoresist material, selectively exposing said photoresist material to radiation, and removing a first portion of said photoresist material, and wherein

said forming an extension comprises forming an extension of each of said conductive lines at each respective angled end face prior to removing a second portion of said photoresist material.

20. The method of claim 16, wherein said selective deposition is one of chemical vapor deposition, atomic layer deposition, and electroless plating.