Precursors for CVD silicon carbo-nitride films

• US 8,383,849 B2
• Filed: 03/18/2011
• Issued: 02/26/2013
• Est. Priority Date: 05/16/2005
• Status: Active Grant

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Xiao, Manchao, Hochberg, Arthur Kenneth
• Primary Examiner(s): NAZARIO GONZALEZ, PORFIRIO
• Application Number:
  US13/051,591
• Publication Number:
  US 20110165346A1
• Time in Patent Office: 711 Days
• Field of Search: 556/410, 556/412, 106/1.05
• US Class Current: 556/410
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C09D 5/00 Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced electrically insulating plastics, resins or waxes H01B3/30; Filling pastes
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si_xC_yN_z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.

The classes of compounds are generally represented by the formulas:

• • and mixtures thereof, wherein R and R¹ in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R¹ in formula A also being combinable into a cyclic group, and R² representing a single bond, (CH₂)_n, a ring, or SiH₂.

Claims

1. A composition for depositing a dielectric film comprising:

an aminosilane comprising the following formula A;

2. The composition of claim 1 wherein R and R¹ are combined into a cyclic group.

3. The composition of claim 1 wherein R and R¹ are isopropyl groups.

4. The composition of claim 1 wherein the precursor comprises bis-tert-butylaminosilane.

5. The composition of claim 1 wherein the precursor comprises tris-iso-propylaminosilane.

6. The composition of claim 1 wherein the precursor comprises bis-diethylaminosilane.

7. The composition of claim 1 wherein the precursor comprises tris-dimethylaminosilane.

8. The composition of claim 1 wherein the precursor comprises bis-iso-propylaminosilane.

10. The composition of claim 2 wherein R comprises isopropyl and R¹ comprises sec-butyl.

9. A composition for depositing a dielectric film comprising:

an aminosilane comprising the following formula A;