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Light emitting device

  • US 8,384,063 B2
  • Filed: 01/09/2012
  • Issued: 02/26/2013
  • Est. Priority Date: 09/12/2008
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦

    x≦

    1, 0≦

    y≦

    1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦

    x≦

    1, 0≦

    y≦

    1), a p-type current diffusion layer made of Inx(AlyGa1-y)1-xP (0≦

    x≦

    1, 0≦

    y≦

    1) or GaP, and a bonding layer made of a semiconductor;

    a p-side electrode;

    a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer; and

    a contact layer provided between the p-side electrode and the current diffusion layer, having generally the same size as the p-side electrode, and made of p-type GaAs,the p-type cladding layer being located more distant from the bonding interface than the light emitting layer,the p-type cladding layer having a carrier concentration of 0.5×

    1017 cm

    3
    or more and 3×

    1017 cm

    3
    or less, andthe p-type current diffusion layer being provided between the p-side electrode and the p-type cladding layer.

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