Light emitting device
First Claim
Patent Images
1. A light emitting device comprising:
- a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type current diffusion layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1) or GaP, and a bonding layer made of a semiconductor;
a p-side electrode;
a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer; and
a contact layer provided between the p-side electrode and the current diffusion layer, having generally the same size as the p-side electrode, and made of p-type GaAs,the p-type cladding layer being located more distant from the bonding interface than the light emitting layer,the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less, andthe p-type current diffusion layer being provided between the p-side electrode and the p-type cladding layer.
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Abstract
A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.
17 Citations
8 Claims
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1. A light emitting device comprising:
-
a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type current diffusion layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1) or GaP, and a bonding layer made of a semiconductor;a p-side electrode; a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer; and a contact layer provided between the p-side electrode and the current diffusion layer, having generally the same size as the p-side electrode, and made of p-type GaAs, the p-type cladding layer being located more distant from the bonding interface than the light emitting layer, the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less, andthe p-type current diffusion layer being provided between the p-side electrode and the p-type cladding layer. - View Dependent Claims (2, 3, 4, 5, 6)
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-
7. A light emitting device comprising:
-
a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), and a bonding layer made of a semiconductor; anda substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer, the p-type cladding layer being located more distant from the bonding interface than the light emitting layer, the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less,the substrate being transparent to emission light from the light emitting layer and having a high resistance, and an n-side electrode being formed on part of a surface of the bonding layer on an opposite side of the bonding interface. - View Dependent Claims (8)
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Specification