Semiconductor device and method for manufacturing the same

• US 8,384,085 B2
• Filed: 08/05/2010
• Issued: 02/26/2013
• Est. Priority Date: 08/07/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime, Sakata, Junichiro, Toyotaka, Kohei
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US12/851,097
• Publication Number:
  US 20110031499A1
• Time in Patent Office: 936 Days
• Field of Search: 257/59, 257/72, 257/43, 257/350, 257/E27.132, 257/E29.276
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.

Claims

1. A semiconductor device comprising:

a pixel portion including a first thin film transistor; and

a driver circuit portion including a second thin film transistor,

wherein the pixel portion and the driver circuit portion are formed over a substrate,

wherein the first thin film transistor includes, over the substrate;

a first source electrode layer,

a first drain electrode layer,

an oxide semiconductor layer formed so as to be electrically connected to the first source electrode layer and the first drain electrode layer,

a gate insulating layer formed so as to cover the oxide semiconductor layer,

a first gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer,

a protective insulating layer formed so as to cover the first gate electrode layer, and

a pixel electrode layer over the protective insulating layer,

wherein the first source electrode layer, the first drain electrode layer, the oxide semiconductor layer, the gate insulating layer, the first gate electrode layer, the protective insulating layer, and the pixel electrode layer of the first thin film transistor have a light-transmitting property,

wherein a second gate electrode layer of the second thin film transistor is covered with the protective insulating layer, and

wherein a material of a second source electrode layer, a second drain electrode layer, and the second gate electrode layer of the second thin film transistor is different from a material of the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor, and is a conductive material with lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor.

2. The semiconductor device according to claim 1, wherein the second gate electrode layer, the second source electrode layer, and the second drain electrode layer of the second thin film transistor are formed using a film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W as a main component or a stack including an alloy film containing any of these elements.

3. The semiconductor device according to claim 1, wherein the second thin film transistor includes, over the substrate, the second source electrode layer;

the second drain electrode layer;

the oxide semiconductor layer formed so as to be electrically connected to the second source electrode layer and the second drain electrode layer;

the gate insulating layer formed so as to cover the oxide semiconductor layer; and

the second gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer.

4. The semiconductor device according to claim 1, wherein each of the first source electrode layer, the first drain electrode layer, the first gate electrode layer, and the pixel electrode layer of the first thin film transistor is formed using a film formed using any of indium oxide, an alloy of indium oxide and tin oxide, an alloy of indium oxide and zinc oxide, and zinc oxide;

or a stack including any of the films in combination.

5. The semiconductor device according to claim 1, further comprising a capacitor portion over the substrate,

wherein the capacitor portion includes a capacitor wiring and a capacitor electrode overlapping with the capacitor wiring, and

wherein the capacitor wiring and the capacitor electrode have a light-transmitting property.

6. The semiconductor device according to claim 1, wherein the second thin film transistor has a back gate.

7. A semiconductor device comprising:

a pixel portion including a first thin film transistor; and

a driver circuit portion including a second thin film transistor,

wherein the pixel portion and the driver circuit portion are formed over a substrate,

wherein the first thin film transistor includes, over the substrate;

a first source electrode layer,

a first drain electrode layer,

an oxide semiconductor layer formed so as to be electrically connected to the first source electrode layer and the first drain electrode layer,

a gate insulating layer formed so as to cover the oxide semiconductor layer,

a first gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer,

a protective insulating layer formed so as to cover the first gate electrode layer, and

a pixel electrode layer over the protective insulating layer,

wherein the first source electrode layer, the first drain electrode layer, the oxide semiconductor layer, the gate insulating layer, the first gate electrode layer, the protective insulating layer, and the pixel electrode layer of the first thin film transistor have a light-transmitting property,

wherein a second gate electrode layer of the second thin film transistor is covered with the protective insulating layer, and

wherein a second source electrode layer, a second drain electrode layer, and the second gate electrode layer of the second thin film transistor are formed using a stack of a film containing the same material as the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor; and

a film containing a conductive material with lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor.

8. The semiconductor device according to claim 7, wherein the film containing the conductive material with the lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor is a film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and Was a main component or a stack including an alloy film containing any of these elements.

9. The semiconductor device according to claim 7, wherein the second thin film transistor includes, over the substrate, the second source electrode layer;

the second drain electrode layer;

the oxide semiconductor layer formed so as to be electrically connected to the second source electrode layer and the second drain electrode layer;

the gate insulating layer formed so as to cover the oxide semiconductor layer; and

the second gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer.

10. The semiconductor device according to claim 7, wherein each of the first source electrode layer, the first drain electrode layer, the first gate electrode layer, and the pixel electrode layer of the first thin film transistor is formed using a film formed using any of indium oxide, an alloy of indium oxide and tin oxide, an alloy of indium oxide and zinc oxide, and zinc oxide;

or a stack including any of the films in combination.

11. The semiconductor device according to claim 7, further comprising a capacitor portion over the substrate,

wherein the capacitor portion includes a capacitor wiring and a capacitor electrode overlapping with the capacitor wiring, and

wherein the capacitor wiring and the capacitor electrode have a light-transmitting property.

12. The semiconductor device according to claim 7, wherein the second thin film transistor has a back gate.