Thin film light emitting diode
First Claim
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1. A light emitting device, comprising:
- a semiconductor structure having a first surface, a second surface, and a side surface, the semiconductor structure comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer;
a first electrode electrically connected to the first-type semiconductor layer, the first electrode comprising a reflective layer, wherein the first electrode is arranged on the first surface that is opposite the second surface;
a second electrode electrically connected to the second-type semiconductor layer;
an insulative passivation layer on the second surface and the side surface of the semiconductor structure; and
a phosphor on the insulative passivation layer, the phosphor having an open space corresponding to the second electrode for an external electrical connection, wherein the external electrical connection comprises a bonding wire, wherein the open space prevents the phosphor from contacting the bonding wire, wherein the insulative passivation layer is arranged between the second surface of the semiconductor structure and the phosphor.
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Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
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Citations
32 Claims
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1. A light emitting device, comprising:
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a semiconductor structure having a first surface, a second surface, and a side surface, the semiconductor structure comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer; a first electrode electrically connected to the first-type semiconductor layer, the first electrode comprising a reflective layer, wherein the first electrode is arranged on the first surface that is opposite the second surface; a second electrode electrically connected to the second-type semiconductor layer; an insulative passivation layer on the second surface and the side surface of the semiconductor structure; and a phosphor on the insulative passivation layer, the phosphor having an open space corresponding to the second electrode for an external electrical connection, wherein the external electrical connection comprises a bonding wire, wherein the open space prevents the phosphor from contacting the bonding wire, wherein the insulative passivation layer is arranged between the second surface of the semiconductor structure and the phosphor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification